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ArticleJ-GLOBAL ID:200902212505958607整理番号:05A1025132

High-frequency surface acoustic wave devices based on LiNbO3/diamond multilayered structure

LiNbO3/ダイヤモンド多層構造に基づいた高周波弾性表面波素子

著者:DOGHECHE E.(Inst. Electronique Microelectronique et Nanotechnologie (IEMN-DOAE), UMR CNRS 8520, Le Mont-Houy Valenciennes Cedex ...)、REMIENS D.(Inst. Electronique Microelectronique et Nanotechnologie (IEMN-DOAE), UMR CNRS 8520, Le Mont-Houy Valenciennes Cedex ...)、SHIKATA S.(Device Technol. Center, Sumitomo Electric Industries, 1-1-3 Shimaya. Konohana-ku, Osaka 554-0024, JPN)・・・
資料名:Appl Phys Lett 巻:87 号:21 ページ:213503-213503-3
発行年:2005年11月21日
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