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ArticleJ-GLOBAL ID:200902212506030594整理番号:06A0592699

Synchrotron x-ray scattering study of thin epitaxial Pr2O3 films on Si(001)

Si(001)上のエピタキシャルPr2O3薄膜のシンクロトロンX線散乱による研究

著者:GUO Xiangxin(Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, DEU)、BRAUN Wolfgang(Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, DEU)、JENICHEN Bernd(Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, DEU)・・・
資料名:J Appl Phys 巻:100 号:2 ページ:023536-023536-5
発行年:2006年07月15日
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