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ArticleJ-GLOBAL ID:200902212509230853整理番号:04A0474101

High-.KAPPA. Al2O3 Gate Dielectrics Prepared by Oxidation of Aluminum Film in Nitric Acid Followed by High-Temperature Annealing

硝酸中でのアルミニウム膜の酸化に引続く高温熱処理により作製した高kのAl2O3ゲート絶縁膜

著者:KUO C‐S(National Taiwan Univ., Taipei, TWN)、HSU J‐F(National Taiwan Univ., Taipei, TWN)、HUANG S‐W(National Taiwan Univ., Taipei, TWN)・・・
資料名:IEEE Trans Electron Devices 巻:51 号:6 ページ:854-858
発行年:2004年06月
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