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ArticleJ-GLOBAL ID:200902212511983230整理番号:06A0895377

Influence of internal fields on gain and spontaneous emission in InGaN quantum wells

GaN量子井戸の利得と自然放出に及ぼす内部電場の影響

著者:HADER J.(Nonlinear Control Strategies Inc., 5669 N. Oracle Rd., Suite 2201, Tucson, Arizona 85704 and Optical Sciences Center ...)、MOLONEY J. V.(Nonlinear Control Strategies Inc., 5669 N. Oracle Rd., Suite 2201, Tucson, Arizona 85704 and Optical Sciences Center ...)、KOCH S. W.(Dep. of Physics, Philipps Universitaet Marburg, Renthof 5, 35032 Marburg, Germany and Materials Sci. Center ...)
資料名:Appl Phys Lett 巻:89 号:17 ページ:171120-171120-3
発行年:2006年10月23日
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