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J-GLOBAL ID:200901090006291217   Update date: Apr. 02, 2024

Mori Nobuya

モリ ノブヤ | Mori Nobuya
Affiliation and department:
Job title: Professor
Homepage URL  (1): http://www.si.eei.eng.osaka-u.ac.jp/
Research field  (1): Electric/electronic material engineering
Research keywords  (2): 半導体物性 ,  Semiconductor Physics
Research theme for competitive and other funds  (26):
  • 2020 - 2025 Simulation of coupled electron-phonon transport in two-dimensional materials and heterostructures
  • 2019 - 2024 Development of Si-based Dirac electron superlattice and its thermoelectric devices based on phonon and electron trapsport physics
  • 2016 - 2020 High performance Si thermoelectric material design based on phonon-carrier wave control in novel heteronanostructures
  • 2015 - 2020 Theoretical Research for Hybrid Quantum Systems
  • 2010 - 2012 Study of Quasi-ballistic Electron Transport in Silicon NanodotArray
Show all
Papers (211):
  • Hajime Tanaka, Tsunenobu Kimoto, Nobuya Mori. Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC. Materials Science in Semiconductor Processing. 2024. 173. 108126-108126
  • Seyed Ali Mojtahedzadeh, Hajime Tanaka, Nobuya Mori. Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure. Japanese Journal of Applied Physics. 2024. 63. 3. 031004-031004
  • Yutoku Murakami, Sachika Nagamizo, Hajime Tanaka, Nobuya Mori. Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential. Japanese Journal of Applied Physics. 2024
  • Keisuke Utsumi, Hajime Tanaka, Nobuya Mori. Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface. Japanese Journal of Applied Physics. 2023
  • Sachika Nagamizo, Hajime Tanaka, Nobuya Mori. Wannier-Stark localization of electronic states in 4H-SiC MOS inversion layer. Japanese Journal of Applied Physics. 2023
more...
MISC (26):
Books (6):
  • 電子物性 -電子デバイスの基礎-
    朝倉書店 2014 ISBN:9784254221602
  • Nonequilibrium Green's function method applied to Landau-quantized superlattices
    Institute of Physics Conference Series 2002
  • Cyclotron resonance in InGaAs/AlAs superlattices under pulsed high magnetic fields
    Institute of Physics Conference Series 2002
  • Phonon cycling in GaAs/AlAs superlattices
    Institute of Physics Conference Series 2002
  • メゾスコピック現象の基礎:表面超格子
    オーム社 1994
more...
Lectures and oral presentations  (81):
  • 直接遷移型半導体におけるバンド間トンネルシミュレーションの高速化
    (応用物理学会春季学術講演会 2021)
  • ゲルマニウムにおけるバンド間トンネル電流のNEGFシミュレーション
    (応用物理学会春季学術講演会 2021)
  • 極微細半導体デバイスの量子輸送シミュレーション
    (第11回材料系ワークショップ 2021)
  • Monte Carlo simulation of two-dimensional carrier mobility in wide-gap semiconductor devices
    (International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 2021)
  • 経験的擬ポテンシャル法を用いた4H-SiCにおける浮遊電子状態の計算
    (先進パワー半導体分科会第7回講演会 2020)
more...
Works (10):
  • 半導体ナノ構造における量子輸送現象に関する研究
    2004 -
  • ゲート長10nm世代を見据えた量子輸送シミュレータの開発
    2004 -
  • 半導体物理における強磁場に関する第16回国際会議、プログラム委員
    2004 -
  • 16th International Conference on High Magnetic Fields in Semiconductor Physics, Program Comittee Member
    2004 -
  • 第25回半導体物理学国際会議、副総務幹事
    2000 -
more...
Education (4):
  • - 1991 Osaka University
  • - 1991 Osaka University Graduate School, Division of Engineering
  • - 1986 Osaka University School of Engineering
  • - 1986 Osaka University Faculty of Engineering
Professional career (1):
  • Ph D
Work history (3):
  • 2015/04 - Osaka University Graduate School of Engineering Professor
  • 2007/04 - 2015/03 Osaka University Graduate School of Engineering
  • 2005/04 - 2007/03 Osaka University Graduate School of Engineering
Association Membership(s) (6):
英国物理学会(Institute of Physics) ,  応用物理学会 ,  日本物理学会 ,  The Institue of Physics ,  The Japan Society of Applied Physics ,  The Physical Society of Japan
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