Rchr
J-GLOBAL ID：200901090855732235   Update date: Aug. 24, 2021

Yoshida Sadafumi

ヨシダ サダフミ | Yoshida Sadafumi
Homepage URL  (1)： http://www.opt.ees.saitama-u.ac.jp/~yoshida/yoshi.html
Research field  (4)： Electronic devices and equipment ,  Electric/electronic material engineering ,  Crystal engineering ,  Applied materials
Research theme for competitive and other funds  (4)：
  • 窒化物半導体の結晶成長と物性評価
  • 炭化珪素半導体のデバイス化プロセス基礎技術の研究
  • Crystal Growth and Characterization of Nitride Semiconductors
  • Study on the basic of the process technologies for silicon carbide devices
MISC (8)：
ｍore...
Books (4)：
  • SiC素子の基礎と応用
    オーム社 2003
  • “Epitaxial Growth, Characterization, and Properties of SiC” in Electric Refractory Materials
    Marcell Dekker, Inc. 2000
  • “Epitaxial Growth, Characterization, and Properties of SiC” in Electric Refractory Materials
    Marcell Dekker, Inc. 2000
  • 「薄膜」
    培風館 1990
Works (2)：
  • 分光偏光解析等によるSiC酸化層の評価
    1998 -
  • Characterization of SiC/oxide interfaces by spectroscopic ellipsometry
    1998 -
Education (6)：
  • - 1972 The University of Tokyo
  • - 1972 The University of Tokyo Graduate School, Division of Engineering
  • - 1969 The University of Tokyo
  • - 1969 The University of Tokyo Graduate School, Division of Engineering
  • - 1967 The University of Tokyo The Faculty of Engineering
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Professional career (2)：
  • 工学修士 (東京大学)
  • 工学博士 (東京大学)
Work history (6)：
  • 1973 - 1997 通商産業省工業技術院電子技術総合研究所
  • 1973 - 1997 Electrotechnical Laboratory, AIST, MITI
  • 1997 - - 埼玉大学工学部教授
  • 1997 - - Professor, Faculty of Engineering, Saitama University
  • 1972 - 1973 The University of Tokyo The Faculty of Engineering
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Awards (1)：
  • 1992 - 市村学術貢献賞
Association Membership(s) (3)：
応用物理学会(常務理事1993-5,評議員1996-,SiC及び関連ワイドギャップ半導体研究会代表幹事1995-1997) ,  電気学会 ,  真空協会(理事1997-)
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