Rchr
J-GLOBAL ID：200901093187699424
Update date: Aug. 28, 2020
Omae Kunimichi
オオマエ クニミチ | Omae Kunimichi
Affiliation and department：
旧所属 大阪大学 大学院工学研究科 (専攻)電気工学専攻
About 旧所属 大阪大学 大学院工学研究科 (専攻)電気工学専攻
Search "旧所属 大阪大学 大学院工学研究科 (専攻)電気工学専攻"
Job title：
日本学術振興会特別研究員
Research field (1)：
Electric/electronic material engineering
Research theme for competitive and other funds (2)：
GaN系半導体における光物性の研究
Study on Optical Property in GaN-based Semiconductors
MISC (46)：
Growth of a large GaN single crystal using the liquid phase epitaxy (LPE) technique. Japanese Journal of Applied Physics. 2003. Vol.42, No.1A/B, pp.L4-L6
F Kawamura, T Iwahashi, K Omae, M Morishita, M Yoshimura, Y Mori, T Sasaki. Growth of a large GaN single crystal using the liquid phase epitaxy (LPE) technique. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS. 2003. 42. 1A-B. L4-L6
Effects of internal electric field on transient absorption in InGaN thin layers and quantum wells with different thickness by pump and probe spectroscopy. Phys. Rev. B. 2003. 68 pp.85303
InGaN量子井戸構造の内部電界効果の井戸幅依存性. 第49回春季応用物理学会学術講演会. 2002
Effects of exciton localization and internal electric fields in InGaN-based quantum structures revealed by pump and probe spectroscopy. 26th International Conference on the Physics of Semiconductors. 2002
ｍore...
Education (4)：
- 1999 Kyoto University
- 1999 Kyoto University Graduate School, Division of Engineering
- 1997 Kyoto University Faculty of Engineering
- 1997 Kyoto University Faculty of Engineering
Professional career (1)：
Doctor of Engineering (Kyoto University)
Association Membership(s) (1)：
応用物理学会
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in
researchmap
.
For details, see here
.
Return to Previous Page
TOP
BOTTOM
