Research field (4):
Semiconductors, optical and atomic physics
, Crystal engineering
, Applied materials
, Thin-film surfaces and interfaces
Research keywords (3):
表面構造
, 化合物半導体
, 分子線エピタキシ
Research theme for competitive and other funds (20):
2022 - 2026 酸化ガリウム低指数面の清浄・吸着表面の原子構造と電気特性
2023 - 2024 Investigation for the advancement of the general-purpose surface-structural-analysis programme, 2DMAT II
2018 - 2021 Polarity selection mechanism of III-nitride semiconductor epitaxial films
2016 - 2019 Crystal Growth of N-polar Nitride Semiconductor Heterostructures with Two-Dimensional Electron Gas
2012 - 2015 Development of red-color emission based on nitride semiconductor for white lighing
2009 - 2011 Observation and control of heteroepitaxy on Si substrate by in situ X-ray diffraction
2008 - 2010 大面積・超高輝度紫外LEDへの挑戦
2007 - 2008 Growth of GaN thin film and fabrication of vertical light emitting diode using CrN nano-crystalline buffer layer
2007 - 2008 ヘテロ界面制御によるZnO基板上への高品質GaNの低温成長
2006 - 2007 周期分極反転した酸化亜鉛による励起子共鳴非線形波長変換
2005 - 2006 The development of AlGaN template using CrN buffer layer
2005 - 2006 Surfactant MBE of ZnO and its applications to the growh of p-type doping
2004 - 2005 金属ガラス合金の軽元素周辺の局所構造と結合状態
2002 - 2002 有機半導体の分子線エピタキシとエレクトロニクス応用
1998 - 2000 Construction of wide gap semiconductor nano-Quantum Dots
1997 - 1998 Development of nano-scale characterization technology for semicondutors and devices with scanning capacitance microscope
1993 - 1993 酸化物超伝導体薄膜の原子層成長
1992 - 1992 酸化物超伝導体薄膜の原子層成長
1990 - 1990 固体表面反応を利用した酸化物超伝導 薄膜原子層の段階的形成
1989 - 1989 団体表面反応を利用した酸化物超伝導薄膜原子層の段階的形成
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Papers (225):
Daisuke Matsukura, Shunsuke Kurosawa, Akihiro Yamaji, Yuji Ohashi, Yuui Yokota, Kei Kamada, Hiroki Sato, Satoshi Toyoda, Masao Yoshino, Takashi Hanada, et al. Relationship of single crystal growth and luminescence properties of Cr-doped gadolinium gallium garnet crystals for radiation dose-rate monitoring systems. Journal of Crystal Growth. 2024
Rei Sasaki, Kei Kamada, Masao Yoshino, Kyoung Jin Kim, Rikito Murakami, Takahiko Horiai, Akihiro Yamaji, Shunsuke Kurosawa, Yuui Yokota, Hiroki Sato, et al. Investigation of the phase diagram of the CsI-LiBr system and fabrication of the eutectic scintillator for thermal neutron detection. Journal of Crystal Growth. 2024. 628
Naomoto Hayashi, Yuui Yokota, Takahiko Horiai, Kohei Yamanoi, Masao Yoshino, Akihiro Yamaji, Rikito Murakami, Takashi Hanada, Hiroki Sato, Yuji Ohashi, et al. Crystal growth, luminescence, and scintillation properties of Er-doped La2Hf2O7 single crystal. Japanese Journal of Applied Physics. 2024. 63. 3. 03SP15-03SP15
Daisuke Matsukura, Shunsuke Kurosawa, Chihaya Fujiwara, Akihiro Yamaji, Yuji Ohashi, Yuui Yokota, Kei Kamada, Hiroki Sato, Yoshino Masao, Takashi Hanada, et al. Feasibility study of one-dimensional imaging with an optical fiber for radiation dose-rate monitoring system in the decommissioning process. Journal of Instrumentation. 2024. 19. 2
Naomoto Hayashi, Yuui Yokota, Takahiko Horiai, Masao Yoshino, Akihiro Yamaji, Rikito Murakami, Takashi Hanada, Hiroki Sato, Yuji Ohashi, Shunsuke Kurosawa, et al. Growth of Mg2Si thermoelectric eutectics by unidirectional solidification. Journal of Crystal Growth. 2024
松倉大佑, 松倉大佑, 黒澤俊介, 黒澤俊介, 黒澤俊介, 藤原千隼, 藤原千隼, 山路晃広, 山路晃広, 大橋雄二, et al. Development of the Long Wavelength Emission Oxide Scintillator for the Radiation Dose-Rate Monitoring System. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2023. 70th
松倉大佑, 松倉大佑, 黒澤俊介, 黒澤俊介, 黒澤俊介, KOCHURIKHIN Vladimir, 小玉翔平, 藤原千隼, 藤原千隼, 山路晃広, et al. Scintillation Properties of Nd-Doped Y3Al5O12 Oxide-Scintillators for the Decommissioning Monitoring System in the Nuclear Plant. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2022. 83rd
野口太生, 大橋雄二, 面政也, 横田有為, 黒澤俊介, 鎌田圭, 佐藤浩樹, 豊田智史, 吉野将生, 山路晃広, et al. Influence of reflected waves at the bonding boundary in double-layered thickness-shear resonator using α-quartz. 圧電材料・デバイスシンポジウム. 2022. 2022
Takashi Hanada, Masao Yoshino, Akihiro Yamaji, Shunsuke Kurosawa, Kei Kamada, Yuji Ohashi, Hiroki Sato, Satoshi Toyoda, Yuui Yokota, Akira Yoshikawa. Step-Flow Growth Model of N-polar GaN Metalorganic Vapor Phase Epitaxy. 日本結晶成長学会誌 Journal of the Japanese Association for Crystal Growth. 2021. 48. 1. 03-1-03-12
Polygonal Spiral Growth Model on N-polar GaN
(The 14th International Conference on Nitride Semiconductors (ICNS-14) 2023)
Surface Structure of Cleaved ScAlMgO4(0001) Substrate for III-nitrides Analyzed by X-ray Crystal Truncation Rod Scattering
(The 12th International Conference on Nitride Semiconductors (ICNS-12) 2017)
Roll of Hydrogen during Metalorganic Vapor Phase Epitaxy of N-polar III-nitrides
(The 12th International Conference on Nitride Semiconductors (ICNS-12) 2017)
Ga-polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter-scale wide terraces
(The 2016 European Materials Research Society Fall Meeting 2016)