Rchr
J-GLOBAL ID:200901094228645780
Update date: Apr. 11, 2024
Miyake Hideto
ミヤケ ヒデト | Miyake Hideto
Affiliation and department:
Homepage URL (1):
http://www.opt.elec.mie-u.ac.jp/
Research field (3):
Electric/electronic material engineering
, Crystal engineering
, Applied materials
Research keywords (6):
深紫外
, カルコパイライト型半導体
, 光デバイス
, Ntride semiconductor
, 半導体工学
, Physics and Technology of Semiconductor Devices
Research theme for competitive and other funds (29):
- 2022 - 2025 窒化物半導体AlGaNの非極性面成長と深紫外LED応用
- 2016 - 2023 国際活動支援班
- 2016 - 2021 Creation of singularity structure by top-down method based on thermal equiburium condition
- 2016 - 2021 Steering Group
- 2017 - 2020 Development of basic science and technology for nitride semiconductor optical devices by controlling phonon functions
- 2016 - 2019 Elucidation of fundamental optical properties of biexcitons in deep ultraviolet ternary alloy quantum wells and application to laser operation
- 2015 - 2018 The plasmonic extraordinary transmission phenomenon of III-nitride semiconductors and application to UV emitting devices
- 2013 - 2015 Study on localized surface plasmon resonance on III-nitride semiconduvtors in deep-UV region
- 2012 - 2015 Control of Deep Ultra-violet Emission and Modulation Epitaxy of Nitride Semicondusturs.
- 2012 - 2015 Nano-void epitaxy of III-nitride semiconductors and controlling light emitting properties of deep-UV light
- 2013 - 2015 Physics of highly polarized semiconductors and their application to deep ultraviolet light emitting devices
- 2009 - 2011 High growth-rate hydride-vapor-phase of aluminum nitride
- 2009 - 2011 Creation of the modulated facet structures of III-nitride semiconductors and development of the white LEDs with wide and continuous wavelength spectra
- 2006 - 2010 Epitaxial growth and defect controlling technique of AlGaN with high AlN molar fraction
- 2006 - 2008 Study on light emitting diode for lighting controlling the luminous intensity distribution by nano-photonics structures
- 2006 - 2007 Epitaxial Growth of AIGaN Using Selective Area Gmwth Technique
- 2003 - 2005 Controlling of UV light by using III-nitride based photonic crystals with nano-antenna
- 2001 - 2002 Luminescence and device application of GaN and AgGaS_2 doped with rare-earth impurities
- 1999 - 2001 Development of New Electronic Emitters using GaN/AIN Super Lattice Structures with Negative Electron Affinity
- 1999 - 2001 Fabrication of Buried Metal Structure and Reduction of Dislocation Density for Nitride Semiconductors by Selective Area Growth Technique
- 1997 - 1998 カルコパイライト型半導体単結晶を基板に用いた同族半導体のエピタキシャル成長
- 1995 - 1995 移動ヒ-タ法によるカルコパイライト型半導体混晶のバルク単結晶成長と評価
- 1994 - 1995 Epitaxial growth of I-Al-VI_2 chalcopyrite semiconductors
- 1993 - 1993 カルコパイライト型半導体のヨウ素輸送法気相エピタキシャル成長
- 1991 - 1991 同族半導体を基板に用いたI-III-VI_2族半導体の液相エピタキシャル成長
- 窒化物半導体のエピタキシャル成長
- I-III-VI2族半導体の結晶成長と物性評価
- Epitaxial Growth of Nitride Semiconductors
- Crystal Growth and Characterization of I-III-VI2 Semiconductors
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Papers (293):
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Yoshihiro Ishitani, Bojin Lin, Hnin Lai Lai Aye, Daiki Yoshikawa, Hideto Miyake, Kohei Ueno, Hiroshi Fujioka. Longitudinal optical (LO) and LO-like phonon resonant mid-infrared radiation emission and absorption by surface micro-structures on III-nitrides. Gallium Nitride Materials and Devices XIX. 2024
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Shin-ichiro Sato, Kanako Shojiki, Ken-ichi Yoshida, Hideaki Minagawa, Hideto Miyake. Optical activation of implanted lanthanoid ions in aluminum nitride semiconductors by high temperature annealing. Optical Materials Express. 2024. 14. 2. 340-340
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Kanako Shojiki, Kenjiro Uesugi, Shiyu Xiao, Hideto Miyake. Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing. Materials Science in Semiconductor Processing. 2023. 166. 107736-107736
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Bojin Lin, Hnin Lai Lai Aye, Kohei Ueno, Hiroshi Fujioka, Hideto Miyake, Yoshihiro Ishitani. Mid-infrared thermal radiation resonating with longitudinal-optical like phonon from n++-doped GaN-semi-insulating GaN grating structure. Journal of Physics D: Applied Physics. 2023
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Toma Nishibayashi, Ryosuke Kondo, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Koki Hattori, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, et al. Fabrication of vertical AlGaN-based ultraviolet-B laser diodes using a laser lift-off method. Applied Physics Express. 2023. 16. 10. 104001-104001
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MISC (248):
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大石悠翔, XIAO Shiyu, 上杉謙次郎, 上杉謙次郎, 秋山亨, 玉野智弘, 三宅秀人. Effects of AlN template polarity on BN grown by MOVPE and high temperature annealing. 電子情報通信学会技術研究報告(Web). 2023. 123. 288(ED2023 14-37)
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大石悠翔, XIAO Shiyu, 上杉謙次郎, 上杉謙次郎, 秋山亨, 三宅秀人. Effects of AlN template polarity on BN grown by MOVPE. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th
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市川俊輔, 岡崎美香, 藤本晴香, AVSAR Eriko, 西村訓弘, 三宅秀人. The emergence of the UV resistant bacterium Priestia in water disinfections with UV-LED. 日本水環境学会年会講演集. 2023. 57th
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臧黎清, 島田康人, 三宅秀人, 西村訓弘. ゼブラフィッシュを用いた深紫外線(UVC)の生体安全性確認及びDNA損傷修復機構の解明. 日本生化学会大会(Web). 2022. 95th
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薮谷歩武, 大森智也, 山田和輝, 長谷川亮太, 岩山章, 岩山章, 神好人, 松本竜弥, 寅丸雅光, 鳥居博典, et al. Improvement of performance for UV-B laser diodes by using high reflectivity dielectric multilayer reflector. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
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Books (1):
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Solution Growth of CuGaS<sub>2</sub> Single Crystals(共著)
Proceedings of the 8th International Conference of Ternary & Multinary Compounds 1990
Lectures and oral presentations (158):
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スパッタアニール A lN を用いた波長 2 30 n m 帯 U V LED の開発
(第70回応用物理学会春季学術講演会)
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ピラー 形成 AlN テンプレート上 への HVPE法による AlN厚膜 成長
(第70回応用物理学会春季学術講演会)
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マルチ・スパッタアニール 法 による多層極性反転 AlN構造の作製
(第70回応用物理学会春季学術講演会)
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ゲート絶縁膜を有するAlGaNチャネルHEMTの作製と評価
(第14回ナノ構造・エピタキシャル成長講演会)
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スパッタアニール法作製a面AlNのc軸配向方向の基板微傾斜角度依存性
(第14回ナノ構造・エピタキシャル成長講演会)
more...
Education (2):
- - 1988 Osaka University
- - 1986 University of Yamanashi Faculty of Engineering
Professional career (2):
Work history (8):
- 2022/04 - 現在 Department of Electrical and Electronic Engineering Graduate School of Engineering, Mie University
- 2021/04 - 2022/03 Mie University
- 2017/04 - 2021/03 三重大学大学院地域イノベーション学研究科 研究科長
- 2015/04 - 2021/03 三重大学大学院地域イノベーション学研究科 教授
- 2015/03 - 2015/04 三重大学大学院工学研究科 教授
- 2007/04 - 2015/03 三重大学大学院工学研究科 准教授
- 1997/04 - 2007/03 三重大学工学部 助教授
- 1988/04 - 1997/03 Mie University Faculty of Engineering
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Awards (12):
- 2022/03 - 三重大学 三重大学優秀論文・著書・作品賞
- 2022/03 - Mie University Mie University Award
- 2021 - 論文賞 Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire
- 2021 - 論文賞 Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire
- 2020/09 - 応用物理学会 第14回(2020年度)フェロー
- 2017/11 - 三重大学 知的財産最優秀出願賞
- 2015/10 - 日本結晶成長学会 第22回日本結晶成長学会技術賞 サファイア基板上への高品質窒化アルミニウム成長技術
- 2015 - ISPlasma2015 Best Presentation Award
- 2008 - 日本技術者認定機構 JABEE 感謝状
- 2008 - 応用物理学会 APEX/JJAP貢献賞
- 1996 - 日本材料学会 日本MRSシンポジウム 奨励賞
- 1994 - 応用物理学会 応用物理学会賞B(奨励賞)
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Association Membership(s) (2):
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