Yasuda Tetsuji

ヤスダテツジ | Yasuda Tetsuji

Affiliation and department：
Job title： Director General
Homepage URL (1)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T41263397

Research field (4)： Chemical reaction and process system engineering , Electronic devices and equipment , Electric/electronic material engineering , Optical engineering and photonics

Research keywords (1)： MOSFET ALD ゲート絶縁膜反射率差分光

Research theme for competitive and other funds (5)：

2017 - 2020 Creation of spin-coupling technology suitable for Si quantum bit integration
2012 - 2015 Study of all nitride gate stack with Metal and Insulator HfNx for high mobility channel
2012 - 2015 Valence-band engineering and interface-dipole control for realizing III-V pMOSFET
2009 - 2011 Measurement and control of charge transfer between organic ultrathin layers and substrates by means of in-situ real-time spectroscopy
2007 - 2008 Development of reflectance difference spectroscopy (RDS) in the vacuum ultraviolet range and its application to characterization of ordering states at the dielectrics interfaces formed on the new channel materials

Papers (252)：

H. Hoang, T. Hori, T. Yasuda, T. Kizu, K. Tsukagoshi, T. Nabatame, Bui N.Q. Trinh, A. Fujiwara. Investigation on solution-processed In-Si-O thin film transistor via spin-coating method. IEEE Xplore Proceedings of 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD). 2018. P-12-1-P-12-4
Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro, Mutsuo Ogura, Wen Hsin Chang, Tetsuji Yasuda, Tatsuro Maeda. Surface cleaning and pure nitridation of GaSb by in-situ plasma processing. AIP ADVANCES. 2017. 7. 10. 5
Takahiro Mori, Shinji Migita, Koichi Fukuda, Hidehiro Asai, Yukinori Morita, Wataru Mizubayashi, Yongxun Liu, Shin-ichi O'uchi, Hiroshi Fuketa, Shintaro Otsuka, et al. Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability. JAPANESE JOURNAL OF APPLIED PHYSICS. 2017. 56. 4. 5
Mori Takahiro, Migita Shinji, Fukuda Koichi, Asai Hidehiro, Morita Yukinori, Mizubayashi Wataru, Liu Yongxun, O'uchi Shin-ichi, Fuketa Hiroshi, Otsuka Shintaro, et al. Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability. Japanese Journal of Applied Physics. 2017. 56. 4
Takahiro Mori, Shinji Migita, Koichi Fukuda, Hidehiro Asai, Yukinori Morita, Wataru Mizubayashi, Yongxun Liu, Shin-ichi O'uchi, Hiroshi Fuketa, Shintaro Otsuka, et al. On the Variability of Tunnel Field-Effect Transistors: Suppression of BTBT Fluctuation by Tunneling Probability Enhancement. International Conference on Solid State Devices and Materials (SSDM). 2016. 51-52

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MISC (130)：

森貴洋, 森山悟士, 松川貴, 安田哲二, 大野圭司. シリコントンネルトランジスタのスピン量子ビット応用. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2018. 65th. ROMBUNNO.19a-G203-3
森貴洋, 右田真司, 福田浩一, 浅井栄大, 森田行則, 水林亘, LIU Y, 大内真一, 更田裕司, 大塚慎太郎, et al. 等電子トラップを導入したTFETのばらつき評価. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2016. 77th. ROMBUNNO.13p-B13-1
福田浩一, 森貴洋, 水林亘, 森田行則, 昌原明植, 安田哲二, 右田真司, 太田裕之. トンネルFETのモデリング. 電子情報通信学会大会講演論文集(CD-ROM). 2015. 2015. ROMBUNNO.CI-4-1
Fukuda Koichi, Mori Takahiro, Mizubayashi Wataru, Morita Yukinori, Masahara Meishoku, Yasuda Tetsuji, Migita Shinji, Ota Hiroyuki. CI-4-1 Modeling of tunnel-FET's. Proceedings of the IEICE General Conference. 2015. 2015. 2. "SS-88"-"SS-89"
Mori Takahiro, Morita Yukinori, Mizubayashi Wataru, Fukuda Koichi, Migita Shinji, Miyata Noriyuki, Masahara Meishoku, Yasuda Tetsuji, Ota Hiroyuki. CI-4-2 ON Current Enhancement in Silicon-Based TFETs Utilizing Isoelectronic Trap Technology. Proceedings of the IEICE General Conference. 2015. 2015. 2. "SS-90"-"SS-91"

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Professional career (1)：

Doctor of Engineering (The University of Tokyo)

Association Membership(s) (5)：

応用物理学会 , American Chemical Society , Applied Physics Society of Japan , American Vacuum Society , American Chemical Society

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