Rchr
J-GLOBAL ID：200901096023947183   Update date: Feb. 26, 2024

Okumura Hajime

オクムラ ハジメ | Okumura Hajime
Affiliation and department：
National Institute of Advanced Industrial Science and Technology Advanced Power Electronics Research Center

About National Institute of Advanced Industrial Science and Technology Advanced Power Electronics Research Center


Homepage URL  (1)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=H71841137
Research field  (1)： Semiconductors, optical and atomic physics
Research theme for competitive and other funds  (2)：
  • 2004 - 2005 シリコンカーバイドエピタキシャル結晶成長のモデリングとエピタキシャル膜特性向上
  • ワイドギャップ半導体の結晶成長評価とデバイス応用
Papers (2)：
  • Akihiro Koyama, Mitsuru Sometani, Kensuke Takenaka, Koji Nakayama, Akira Miyasaka, Kazutoshi Kojima, Kazuma Eto, Tomohisa Kato, Junji Senzaki, Yoshiyuki Yonezawa, et al. Low V F 4H-SiC N-i-P diodes using newly developed low-resistivity p-type substrates. Japanese Journal of Applied Physics. 2020. 59. SG. SGGD14-SGGD14
  • Susumu Tsukimoto, Tatsuhiko Ise, Genta Maruyama, Satoshi Hashimoto, Tsuguo Sakurada, Junji Senzaki, Tomohisa Kato, Kazutoshi Kojima, Hajime Okumura. Correlation between local strain distribution and microstructure of grinding-induced damage layers in 4H-SiC(000 ̄1). Materials Science Forum. 2017. 897. 177-180
MISC (71)：
ｍore...
Professional career (1)：
  • Doctor of Engineering (Osaka University)
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