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ArticleJ-GLOBAL ID:200902076438939944整理番号:91A0116168

カーボンドープp形GaAs,InGaAsのデバイスへの応用に関する検討

Study of carbon-doped p-type GaAs and InGaAs for device applications.

著者:三宅隆二(東京工大 工)、野崎真次(インテルコーポレーション)、山田巧(東京工大 工)・・・
資料名:電子情報通信学会技術研究報告 巻:90 号:298(ED90 105-115 ) ページ:19-24
発行年:1990年11月16日
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