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ArticleJ-GLOBAL ID:200902076450253519整理番号:89A0253035

高周波マグネトロンスパッタによるZnS:EuF3薄膜EL素子

ZnS : EuF3 film EL device by high-frequency magnetron sputtering.

著者:青笹正夫(大阪市大)、陣恵徳(大阪市大)、安藤慶一(大阪市大)
資料名:電気学会全国大会講演論文集 巻:1989 号:4 ページ:4.31
発行年:1989年04月
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