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ArticleJ-GLOBAL ID:200902076453899177整理番号:83A0050627

Pulsed characterization of X-band GaAs DDR IMPATT diodes.

XバンドGaAsDDRIMPATTダイオードのパルス特性

著者:HARRIS M(Raytheon Co., Massachusetts)、LATON R(Raytheon Co., Massachusetts)、WAGNER L(Raytheon Co., Massachusetts)
資料名:IEEE MTT-S Int Microw Symp Dig 巻:1982 ページ:146-148
発行年:1982年
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