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ArticleJ-GLOBAL ID:200902076477370509整理番号:89A0079680

Transverse electron and hole transport with avalanche multiplication in semiconductor devices.

半導体素子でなだれ増倍をする電子および正孔の横方向輸送

著者:KYUREGYAN A S(V.I. Lenin All‐Union Electrical Engineering Inst., Moscow, SUN)
資料名:Sov Phys Tech Phys 巻:33 号:1 ページ:103-104
発行年:1988年01月
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About J-GLOBAL

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