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ArticleJ-GLOBAL ID:200902076488397506整理番号:92A0434217

Abnormal redistribution of Zn in InP/InGaAs heterojunction bipolar transistor structures.

InP/InGaAsヘテロ接合バイポーラトランジスタ構造におけるZnの異常再分布

著者:KURISHIMA K(NTT LSI Lab., Kanagawa, JPN)、KOBAYASHI T(NTT LSI Lab., Kanagawa, JPN)、GOESELE U(NTT LSI Lab., Kanagawa, JPN)
資料名:Applied Physics Letters 巻:60 号:20 ページ:2496-2498
発行年:1992年05月18日
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