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ArticleJ-GLOBAL ID:200902076536615790整理番号:83A0108980

Monte Carlo simulation of GaAs submicron n+-n-n+ diode with GaAlAs heterojunction cathode.

GaAlAsヘテロ接合陰極をもつGaAsサブミクロンn+‐n‐n+ダイオードのモンテ・カルロ・シミュレーション

著者:TOMIZAWA K(Electrotechinical Lab., Ibaraki)、AWANO Y(Electrotechinical Lab., Ibaraki)、HASHIZUME N(Electrotechinical Lab., Ibaraki)・・・
資料名:Electronics Letters 巻:18 号:25/26 ページ:1067-1069
発行年:1982年12月09日
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