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ArticleJ-GLOBAL ID:200902076577635488整理番号:90A0117989

光導電減衰法を用いたMBE GaAs on Siの非接触評価

Contactless measurements of MBE GaAs on Si by photoconductive decay method.

著者:宇佐美晶(名古屋工大)、伊藤明(名古屋工大)、徳田豊(愛知工大)・・・
資料名:電子情報通信学会技術研究報告 巻:89 号:326(SDM89 131-142) ページ:1-5
発行年:1989年12月07日
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