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ArticleJ-GLOBAL ID:200902076607667460整理番号:86A0556922

Photoelectrochemical cells of the electrolyte-metal-insulator-semiconductor (EMIS) configuration. I. Metal thickness and coverage effects in the Pt/silicon oxide/n-Si system.

電解質‐金属‐絶縁体‐半導体(EMIS)構成の光電気化学セル I Pt/酸化けい素/n‐Si系における金属厚さと被覆率の影響

著者:HOWE A T(Amoco Corp., Illinois)、HAWKINS R T II(Amoco Corp., Illinois)、FLEISCH T H(Amoco Corp., Illinois)
資料名:J Electrochem Soc 巻:133 号:7 ページ:1369-1375
発行年:1986年07月
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