Art
J-GLOBAL ID：200902076607667460
Reference number：86A0556922
Photoelectrochemical cells of the electrolyte-metal-insulator-semiconductor (EMIS) configuration. I. Metal thickness and coverage effects in the Pt/silicon oxide/n-Si system.
電解質-金属-絶縁体-半導体(EMIS)構成の光電気化学セル I Pt/酸化けい素/n-Si系における金属厚さと被覆率の影響
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Author (3)：
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Material：
Volume：
133
Issue：
7
Page：
1369-1375
Publication year：
Jul. 1986
JST Material Number：
C0285A
ISSN：
1945-7111
CODEN：
JESOAN
Document type：
Article
Article type：
原著論文
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Solar cell
, Electrochemical reaction
Terms in the title (8)：
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Keywords automatically extracted from the title.
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