Misfit dislocations in(111)A InP/In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP double heterostructure wafers grown by liquid phase epitaxy.

YAMAZAKI S; NAKAJIMA K; KOMIYA S; KISHI Y; AKITA K

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J-GLOBAL ID：200902076608919161 Reference number：84A0463276

Misfit dislocations in(111)A InP/In_0.53Ga_0.47As/InP double heterostructure wafers grown by liquid phase epitaxy.

液相エピタクシー成長(111)A InP/In_0.53Ga_0.47As/InP二重ヘテロ構造ウエハの不整合転位

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Author (5)： , , , ,
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Volume： 55 Issue： 10 Page： 3478-3484 Publication year： May. 15, 1984
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Lattice defects in semiconductors

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Misfit dislocations in(111)A InP/In0.53Ga0.47As/InP double heterostructure wafers grown by liquid phase epitaxy.

Misfit dislocations in(111)A InP/In_0.53Ga_0.47As/InP double heterostructure wafers grown by liquid phase epitaxy.