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ArticleJ-GLOBAL ID:200902076616450911整理番号:90A0271349

Variation of high frequency negative resistance of silicon n+pp+ and GaAs p+nn+ IMPATT diodes with enhancement of reverse saturation current.

けい素n+pp+およびGaAs p+nn+IMPATTダイオードに関する逆飽和電流の増大に伴う高周波負性抵抗の変化

著者:MAZUMDER N(Univ. Calcutta)、BANERJEE J P(Univ. Calcutta)、ROY S K(Univ. Calcutta)
資料名:Phys Status Solidi A 巻:116 号:1 ページ:415-424
発行年:1989年11月
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