Art
J-GLOBAL ID：200902076616450911
Reference number：90A0271349
Variation of high frequency negative resistance of silicon n+pp+ and GaAs p+nn+ IMPATT diodes with enhancement of reverse saturation current.
けい素n+pp+およびGaAs p+nn+IMPATTダイオードに関する逆飽和電流の増大に伴う高周波負性抵抗の変化
-
Publisher site
Copy service
{{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=90A0271349©=1") }}
-
Access JDreamⅢ for advanced search and analysis.
{{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=90A0271349&from=J-GLOBAL&jstjournalNo=D0774A") }}
Author (3)：
,
,
Material：
Volume：
116
Issue：
1
Page：
415-424
Publication year：
Nov. 1989
JST Material Number：
D0774A
ISSN：
0031-8965
Document type：
Article
Article type：
原著論文
Country of issue：
Germany, Federal Republic of (DEU)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
JST classification (1)：
JST classification
Category name(code) classified by JST.
Diodes
Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
,
,
,
,
Return to Previous Page
