Art
J-GLOBAL ID：200902076637595898   Reference number：81A0396244

Mobile and immobile localized excitons induced by the stacking fault in GaSe.

GaSe内積層欠陥により生じた可動および非可動局在励起子
Author (2)：
SASAKI Y

About SASAKI Y

(Tohoku Univ.)

About Tohoku Univ.

, 
NISHINA Y

About NISHINA Y

(Tohoku Univ.)

About Tohoku Univ.


Material：
Physica B+C  (Physica B C)

About Physica B+C


Volume： 105  Issue： 1/3  Page： 45-49  Publication year： May. 1981 
JST Material Number： H0676A  ISSN： 0378-4363  CODEN： PHYSA  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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selenide(chalcogenide)

About selenide(chalcogenide)

,...
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JST classification (3)：
JST classification
Category name(code) classified by JST.
Excitons 
(BM02120E)

About Excitons

,  Lattice defects in semiconductors 
(BK12040Q)

About Lattice defects in semiconductors

,  Luminescence of semiconductors 
(BM08092S)

About Luminescence of semiconductors

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
GaSe

About GaSe

, 
積層欠陥

About 積層欠陥

, 
励起子

About 励起子


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