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ArticleJ-GLOBAL ID:200902076642264840整理番号:87A0282122

Observation of an oxygen-related mobility-gap defect in ion-implanted hydrogenated amorphous silicon films.

水素添加アモルファスシリコン薄膜においてイオン注入された酸素に関係する移動度ギャップ欠陥の観測

著者:MICHELSON C E(Univ. Oregon, OR, USA)、GELATOS A V(Univ. Oregon, OR, USA)、COHEN J D(Univ. Oregon, OR, USA)・・・
資料名:Phys Rev B Condens Matter Mater Phys 巻:35 号:8 ページ:4141-4144
発行年:1987年03月15日
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