Art
J-GLOBAL ID：200902076667095253   Reference number：88A0383930

Effect of oxygen on the migration of the carbon interstitial defect in silicon.

シリコン中の炭素格子間欠陥の移動に対する酸素の効果
Author (1)：
LONDOS C A

About LONDOS C A

(Univ., Athens, Athens, GRC)

About Univ., Athens, Athens, GRC


Material：
Physical Review. B. Condensed Matter and Materials Physics  (Physical Review. B. Condensed Matter)

About Physical Review. B. Condensed Matter and Materials Physics


Volume： 37  Issue： 8  Page： 4175-4179  Publication year： Mar. 15, 1988 
JST Material Number： D0746A  ISSN： 1098-0121  CODEN： PRBMDO  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
silicon

About silicon

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=88A0383930&from=J-GLOBAL&jstjournalNo=D0746A") }}
JST classification (2)：
JST classification
Category name(code) classified by JST.
Lattice defects in semiconductors 
(BK12040Q)

About Lattice defects in semiconductors

,  Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
シリコン

About シリコン

, 
炭素

About 炭素

, 
格子

About 格子

, 
欠陥

About 欠陥

, 
酸素

About 酸素


Return to Previous Page

TOP

BOTTOM