Art

J-GLOBAL ID：201602215947145431   Reference number：16A0793956

Effect of Operating Current on the Endurance Characteristics of Phase Change Memory Cells

操作電流の相転移メモリユニットに対する疲労特性の影響【JST・京大機械翻訳】

Author (10)： Huo Ruru (Shanghai Institute of Micro-System and Information Technology) ,  Cai Daolin (Shanghai Institute of Micro-System and Information Technology) ,  Chen Yifeng (Shanghai Institute of Micro-System and Information Technology) ,  Wang Yuchan (Shanghai Institute of Micro-System and Information Technology) ,  Wang Yueqing (Shanghai Institute of Micro-System and Information Technology) ,  Wei Hongyang (Shanghai Institute of Micro-System and Information Technology) ,  Wang Qing (Shanghai Institute of Micro-System and Information Technology) ,  Xia Yangyang (Shanghai Institute of Micro-System and Information Technology) ,  Chen Bangming (Shanghai Institute of Micro-System and Information Technology) ,  Song Zhitang (Shanghai Institute of Micro-System and Information Technology)
Material： Bandaoti Jishu  (Semiconductor Technology)
Volume： 40  Issue： 12  Page： 944-949  Publication year： 2015 
JST Material Number： C2378A  ISSN： 1003-353X  Document type： Article
Article type： 原著論文  Country of issue： China (CHN)  Language： CHINESE (ZH)

Abstract/Point： Two sets of experiments were d...

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Thesaurus term： comparative test ,  fatigue life ,  *phase transition ,  pulse duration ,  pulse ,  drift(migration) ,  *memory(computer) ,  *electric current
Semi thesaurus term： 相変化材料 ,  パルス電流 ,  疲労特性 ,  *相変化メモリ , 【Automatic Indexing@JST】

Author keywords (5)： phase change memory ,  endurance ,  resistance drifting ,  operating current ,  memory fails

JST classification (2)： Mechanical properties  (WB02030U) ,  Metallic materials  (HC05020S)

Terms in the title (2)： 相転移メモリ ,  疲労特性