Art
J-GLOBAL ID:201702235485417249   Reference number:17A0214170

High-yield large area MoS2 technology: Material, device and circuits co-optimization

高収率大面積MoS_2技術:材料,デバイスと回路の同時最適化【Powered by NICT】
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Material:
Volume: 2016  Issue: IEDM  Page: 5.7.1-5.7.4  Publication year: 2016 
JST Material Number: W2441A  Document type: Proceedings
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Two-dimensional electronics ba...
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Secondary batteries  ,  Carbon and its compounds 
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