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J-GLOBAL ID：201702235982279869   Reference number：17A0055497

The influence of ozone pre-treatment in HfO₂-based resistive switching memory structures

HfO_2~をベースにした抵抗スイッチングメモリ構造におけるオゾン前処理の影響【Powered by NICT】

Author (4)： Benko P. (Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovic∨ova 3, 812 19 Bratislava, Slovakia) ,  Mikolasek M. (Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovic∨ova 3, 812 19 Bratislava, Slovakia) ,  Harmatha L. (Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Institute of Electronics and Photonics, Ilkovic∨ova 3, 812 19 Bratislava, Slovakia) ,  Frohlich K. (Slovak Academy of Sciences, Institute of Electrical Engineering, Du ́bravska ́ cesta 9, 841 04 Bratislava, Slovakia)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： ASDAM  Page： 243-246  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： The paper examines the influen...

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Thesaurus term： reproducibility ,  *ozone ,  voltage ,  *pretreatment ,  electrical resistivity ,  MIM structure
Semi thesaurus term： ALCVD ,  二層 ,  窒化チタン ,  *抵抗スイッチング ,  *抵抗スイッチングメモリ , 【Automatic Indexing@JST】

JST classification (2)： Oxide thin films  (BK14050P) ,  Semiconductor integrated circuit  (NC03162T)

Terms in the title (3)： 抵抗スイッチングメモリ ,  オゾン ,  前処理