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J-GLOBAL ID：201702244261331165   Reference number：17A0214305

Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logic

28nm論理に埋め込まれた高機能で信頼性のある8Mb STT-MRAM【Powered by NICT】

Author (19)： Song Y. J. (R&D Center, Samsung Electronic Corp, Hwasung, Korea) ,  Lee J. H. (R&D Center, Samsung Electronic Corp, Hwasung, Korea) ,  Shin H. C. (R&D Center, Samsung Electronic Corp, Hwasung, Korea) ,  Lee K. H. (R&D Center, Samsung Electronic Corp, Hwasung, Korea) ,  Suh K. (R&D Center, Samsung Electronic Corp, Hwasung, Korea) ,  Kang J. R. (R&D Center, Samsung Electronic Corp, Hwasung, Korea) ,  Pyo S. S. (S. LSI division, Samsung Electronic Corp, Kiheung, Korea) ,  Jung H. T. (S. LSI division, Samsung Electronic Corp, Kiheung, Korea) ,  Hwang S. H. (S. LSI division, Samsung Electronic Corp, Kiheung, Korea) ,  Koh G. H. (R&D Center, Samsung Electronic Corp, Hwasung, Korea) ,  Oh S. C. (R&D Center, Samsung Electronic Corp, Hwasung, Korea) ,  Park S. O. (R&D Center, Samsung Electronic Corp, Hwasung, Korea) ,  Kim J. K. (R&D Center, Samsung Electronic Corp, Hwasung, Korea) ,  Park J. C. (R&D Center, Samsung Electronic Corp, Hwasung, Korea) ,  Kim J. (R&D Center, Samsung Electronic Corp, Hwasung, Korea) ,  Hwang K. H. (R&D Center, Samsung Electronic Corp, Hwasung, Korea) ,  Jeong G. T. (R&D Center, Samsung Electronic Corp, Hwasung, Korea) ,  Lee K. P. (R&D Center, Samsung Electronic Corp, Hwasung, Korea) ,  Jung E. S. (R&D Center, Samsung Electronic Corp, Hwasung, Korea)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： IEDM  Page： 27.2.1-27.2.4  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We fabricated 8Mb 1T-1MTJ STT-...

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Thesaurus term： optimization ,  integral ,  pattern formation ,  failure ,  Copper ,  ion etching ,  electric power ,  magnetic property ,  magnesium oxide ,  *reliability (property) ,  complementary metal oxide semiconductor ,  back end ,  breaking of wire ,  modification

JST classification (1)： Metal-insulator-metal structures  (BM03087F)

Terms in the title (2)： 論理 ,  STT-MRAM