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J-GLOBAL ID:201702250229252885   Reference number:17A0214229

A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2 FET

サブ5nm単分子層MoS_2FETのためのn/p型手術と界面障壁低下によるSi TMD接触の数値的研究【Powered by NICT】
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Volume: 2016  Issue: IEDM  Page: 14.3.1-14.3.4  Publication year: 2016 
JST Material Number: W2441A  Document type: Proceedings
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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An atomic-scale numerical stud...
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Electric conduction in other inorganic compounds  ,  Semiconductor thin films  ,  Transistors  ,  Fusion devices  ,  Electronic structure of molecules  ,  Electron spectroscopy  ,  General theory of electronic transport  ,  Electrochemistry in general  ,  Photoemission and photoelectrons 

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