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J-GLOBAL ID：201702253604265274   Reference number：17A0214198

Vertical channel devices enabled by through silicon via (TSV) technologies

(TSV)技術によるによるシリコンにより可能になった垂直チャネルデバイス【Powered by NICT】

Author (15)： Kothandaraman C. (IBM T.J. Watson Research Center, Yorktown Heights, NY, USA) ,  Rosenblatt S. (IBM T.J. Watson Research Center, Yorktown Heights, NY, USA) ,  Safran J. (GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA) ,  Oldiges P. (IBM T.J. Watson Research Center, Yorktown Heights, NY, USA) ,  Kulkarni-Kerber P. (IBM T.J. Watson Research Center, Yorktown Heights, NY, USA) ,  Xumalo J. (GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA) ,  Landers W. (IBM T.J. Watson Research Center, Yorktown Heights, NY, USA) ,  Liu J. (GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA) ,  Oakley J. A. (GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA) ,  Butt S. (GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA) ,  Graves-Abe T. L. (GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA) ,  Robson N. (GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA) ,  Farooq M. G. (GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA) ,  Berger D. (GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA) ,  Iyer S. S. (Dept. Electrical and Computer Engineering, UCLA, CA, USA)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： IEDM  Page： 9.6.1-9.6.4  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Novel device structures with v...

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Thesaurus term： product design ,  device structure ,  characterization ,  *silicon

JST classification (1)： Manufacturing technology of solid-state devices  (NC03030V)

Terms in the title (3)： TSV ,  シリコン ,  垂直チャネル