Art

J-GLOBAL ID：201702257533492445   Reference number：17A0057902

High linearity step-graded AlGaN/GaN heterojunction field effect transistor

高直線性ステップ勾配AlGaN/GaNヘテロ接合電界効果トランジスタ【Powered by NICT】

Author (10)： Fang Y. L. (National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China) ,  Song X. B. (National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China) ,  Feng Z. H. (National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China) ,  Yin J. Y. (National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China) ,  Zhang Z. R. (National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China) ,  Wang B. (National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China) ,  Guo Y. M. (National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China) ,  Wang Y. G. (National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China) ,  Lv Y. J. (National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China) ,  Cai S. J. (National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： SSLChina: IFWS  Page： 104-106  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We designed and fabricated the...

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Thesaurus term： industrialization ,  linearity ,  radio transmission ,  mutual conductance ,  *heterojunction ,  *gallium nitride ,  optimization ,  FET
Semi thesaurus term： 成長モード ,  傾斜層 ,  ヘテロ構造 ,  *AlGaN/GaN ,  *高直線性 , 【Automatic Indexing@JST】

JST classification (1)： Manufacturing technology of solid-state devices  (NC03030V)

Terms in the title (6)： 高直線性 ,  勾配 ,  AlGaN ,  GaN ,  ヘテロ接合 ,  電界効果トランジスタ