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J-GLOBAL ID:201702257533492445   Reference number:17A0057902

High linearity step-graded AlGaN/GaN heterojunction field effect transistor

高直線性ステップ勾配AlGaN/GaNヘテロ接合電界効果トランジスタ【Powered by NICT】
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Volume: 2016  Issue: SSLChina: IFWS  Page: 104-106  Publication year: 2016 
JST Material Number: W2441A  Document type: Proceedings
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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We designed and fabricated the...
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Manufacturing technology of solid-state devices 

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