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J-GLOBAL ID：201702269913880472   Reference number：17A0181221

GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode

404nm GaNレーザダイオードを用いた大消光比導波路変調器集積化を用いた可能になったGHz変調【Powered by NICT】

Author (9)： Shen Chao (Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 21534, Saudi Arabia) ,  Lee Changmin (Materials Department, University of California Santa Barbara, Santa Barbara (UCSB), CA 93106, USA) ,  Ng Tien Khee (Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 21534, Saudi Arabia) ,  Speck James S. (Materials Department, University of California Santa Barbara, Santa Barbara (UCSB), CA 93106, USA) ,  Nakamura Shuji (Materials Department, University of California Santa Barbara, Santa Barbara (UCSB), CA 93106, USA) ,  DenBaars Steven P. (Materials Department, University of California Santa Barbara, Santa Barbara (UCSB), CA 93106, USA) ,  Alyamani Ahmed Y. (King Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabia) ,  Eldesouki Munir M. (King Abdulaziz City for Science and Technology (KACST), Riyadh 11442, Saudi Arabia) ,  Ooi Boon S. (Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 21534, Saudi Arabia)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： IPC  Page： 813-814  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： A 404-nm emitting InGaN-based ...

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Thesaurus term： *modulator ,  bandwidth ,  *semiconductor laser ,  voltage ,  *extinction ratio ,  light emission ,  *waveguide ,  *gallium nitride
Semi thesaurus term： データ伝送 ,  InGaN ,  半極性 , 【Automatic Indexing@JST】

JST classification (1)： Semiconductor lasers  (BD04070L)

Terms in the title (8)： GaN ,  レーザダイオード ,  消光比 ,  導波路 ,  変調器 ,  集積化 ,  GHz ,  変調