Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells

LI Dong Hua; KIM Wandong; KIM Wandong; SHIM Won Bo; SHIM Won Bo; PARK Se Hwan; PARK Se Hwan; KIM Yoon; KIM Yoon; LEE Gil Sung; LEE Gil Sung; KIM Doo-Hyun; KIM Doo-Hyun; LEE Jung Hoon; LEE Jung Hoon; YUN Jang-Gn; YUN Jang-Gn; CHO Seongjae; CHO Seongjae; PARK Il Han; PARK Il Han; LEE Jong-Ho; SHIN Hyungcheol; PARK Byung-Gook

Art

J-GLOBAL ID：201702280628068930 Reference number：17A0131025

Improvement of Characteristics with a Sub-5 nm Ge-Doped Silicon Nitride Layer in Charge Trap Flash Memory Cells

電荷トラップフラッシュメモリセルにおけるサブ5nm Geドープ窒化ケイ素層による特性改善

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Material：
Volume： 8 Issue： 7 Page： 577-580 Publication year： Jul. 2016
JST Material Number： W2373A ISSN： 1941-4900 Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor integrated circuit

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