Art

J-GLOBAL ID：201702288147091577   Reference number：17A0353917

THE CONTROL OF SnO_2: F/P-a-SiC: H SCHOTTKY BARRIER BY CO_2 PLASMA TREATMENT

CO_2プラズマ処理によるSNO_2:P-A-SIC:H障壁の制御【JST・京大機械翻訳】

Author (6)： Li Tiantian (Institute of Photo-Electronic Thin Film Device and Technique, Nankai University) ,  Zhang Xiaodan (Institute of Photo-Electronic Thin Film Device and Technique, Nankai University) ,  Zhang Dekun (Institute of Photo-Electronic Thin Film Device and Technique, Nankai University) ,  Sun Jian (Institute of Photo-Electronic Thin Film Device and Technique, Nankai University) ,  Wang Guangcai (Institute of Photo-Electronic Thin Film Device and Technique, Nankai University) ,  Zhao Ying (Institute of Photo-Electronic Thin Film Device and Technique, Nankai University)
Material： Taiyangneng Xuebao  (Taiyono Gakuho)
Volume： 37  Issue： 11  Page： 2988-2993  Publication year： 2016 
JST Material Number： W0629A  ISSN： 0254-0096  Document type： Article
Article type： 原著論文  Country of issue： China (CHN)  Language： CHINESE (ZH)

Abstract/Point： CO_2 plasma(COP)treatment is i...

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Thesaurus term： short wave ,  work function ,  *plasma ,  Oxygen ,  interface (surface) ,  machining time ,  *plasma treatment ,  battery ,  etching ,  surface energy ,  absorbed amount ,  conductive glass ,  Time ,  machining condition ,  condition

Author keywords (4)： CO_2 plasma ,  FTO ,  Schottky barrier ,  a-Si:H solar cell

JST classification (1)： Solar cell  (NC03084O)

Terms in the title (2)： プラズマ処理 ,  障壁