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J-GLOBAL ID：201702295222675803   Reference number：17A0214185

Multi-domain compact modeling for GeSbTe-based memory and selector devices and simulation for large-scale 3-D cross-point memory arrays

GeSbTeベース記憶とセレクタデバイスのためのマルチドメインコンパクトモデリングと大規模3Dクロスポイントメモリアレイのシミュレーション【Powered by NICT】

Author (11)： Xu Nuo (Device Lab, Samsung Semiconductor America, San Jose, CA, 95134, USA) ,  Wang Jing (Device Lab, Samsung Semiconductor America, San Jose, CA, 95134, USA) ,  Deng Yexin (Device Lab, Samsung Semiconductor America, San Jose, CA, 95134, USA) ,  Lu Yang (Device Lab, Samsung Semiconductor America, San Jose, CA, 95134, USA) ,  Fu Bo (Device Lab, Samsung Semiconductor America, San Jose, CA, 95134, USA) ,  Choi Woosung (Device Lab, Samsung Semiconductor America, San Jose, CA, 95134, USA) ,  Monga Udit (Semiconductor R&D Center, Samsung Electronics, Hwasung-si, Gyeonggi-do, Korea) ,  Jeon Jongwook (Semiconductor R&D Center, Samsung Electronics, Hwasung-si, Gyeonggi-do, Korea) ,  Kim Jongchol (Semiconductor R&D Center, Samsung Electronics, Hwasung-si, Gyeonggi-do, Korea) ,  Lee Keun-Ho (Semiconductor R&D Center, Samsung Electronics, Hwasung-si, Gyeonggi-do, Korea) ,  Jung Eun Seung (Semiconductor R&D Center, Samsung Electronics, Hwasung-si, Gyeonggi-do, Korea)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： IEDM  Page： 7.7.1-7.7.4  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： A novel compact model is devel...

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Thesaurus term： reliability(property) ,  phase transition ,  constraint condition(restriction) ,  memory element ,  *three dimension
Semi thesaurus term： 書込マージン , 【Automatic Indexing@JST】

JST classification (2)： Measurement,testing and reliability of solid-state devices  (NC03040G) ,  Transistors  (NC03070N)

Terms in the title (4)： セレクタ ,  大規模 ,  3D ,  シミュレーション