Rchr
J-GLOBAL ID：201001002247205880
Update date: Apr. 14, 2024
Tsunoda Isao
ツノダ イサオ | Tsunoda Isao
Affiliation and department：
Research field (2)：
Crystal engineering
, Electric/electronic material engineering
Research keywords (2)：
結晶成長
, 半導体工学
Research theme for competitive and other funds (2)：
- 2017 - 2020 Low temperature formation of orientation controlled crystalline group IV semiconductor on insulating substrate by using metal induced crystallization method
- 2014 - 2016 Development of low temperature formation for group IV crystalline semiconductor film on insulating substrate by catalytic crystallization method
Papers (60)：
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Toyonori Matsuda, Isao Tsunoda, Shinichiro Koba, Yu Oshiro, Hiroyuki Odagawa. Polarization Property Associated with Surface Plasmon Resonance in a Palladium Thin-Film Coated Aluminum Grating in a Conical Mounting and Its Application to Hydrogen Gas Detection. Sensors. 2024. 24. 6. 1990-1990
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Kenichiro Takakura, Kensuke Matsumoto, Kousei Tateishi, Masashi Yoneoka, Isao Tsunoda, Shigekazu Suzuki, Shinji Kawatsuma. Assessment of Radiation Tolerance of Flash Memory by γ-Ray Irradiation. J. Robotics Mechatronics. 2024. 36. 1. 88-94
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Atsuki Morimoto, Towa Hirai, Ayato Takazaiku, Yo Eto, Hajime Kuwazuru, Kenichiro Takakura, Isao Tsunoda. Enhancement of Mg-induced lateral crystallization of amorphous germanium on an insulating substrate by two-step annealing. Japanese Journal of Applied Physics. 2024. 63. 2. 02SP50-02SP50
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Toyonori Matsuda, Hiroyuki Odagawa, Isao Tsunoda,Masanori Nagata, Takao Kawakita. Investigation into Ethanol Concentration Changes of Ethanol-Water Solution Using Polarization Property Associated with Surface Plasmon Resonance in Aluminum Grating in Conical Mounting. Sensors and Materials. 2023. 35. 11. 3551-3551
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Kouki Fukushima, Naoki Mizunuma, Tatsuya Uematsu, Kyoko Shimizu, Takehiro Ota, Isao Tsunoda, Masashi Yoneoka, Haruhiko Udono, Kenichiro Takakura. Study of deep levels in the Mg2Si grown by vertical Bridgeman method. Japanese Journal of Applied Physics. 2022. 62. SD. SD1012-SD1012
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MISC (374)：
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角田功, 高倉健一郎. Metal induced lateral crystallization of amorphous Ge on insulating substrate. 電子情報通信学会技術研究報告(Web). 2023. 123. 8(SDM2023 1-17)
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森本敦己, 平井杜和, 高細工彩斗, 小嶺龍生, 高倉健一郎, 角田功. Solid phase crystallization of amorphous Ge/Mg/SiO2 stacked structure. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2023. 70th
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森本敦己, 阿部陸斗, 平井杏奈, 平井杜和, 高倉健一郎, 角田功. EDX evaluation of Mg atoms on Mg-induced lateral crystallization of amorphous Ge / SiO2. 電子情報通信学会技術研究報告(Web). 2022. 122. 8(SDM2022 1-13)
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森本敦己, 阿部陸斗, 平井杏奈, 平井杜和, 高倉健一郎, 角田功. Influence of Mg diffusion on Mg-induced lateral crystallization of amorphous Ge / SiO2. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
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Kazuaki Sumi, Noboru Shimizu, Kenichiro Takakura, Isao Tsunoda. Low temperature formation of high-quality crystalline Ge (111) by improving Au-catalyst crystallinity. 2021. C02-03-12
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Patents (1)：
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ゲルマニウム層つき基板の製造方法及びゲルマニウム層付き基板
Education (1)：
Professional career (1)：
Work history (4)：
- 2012/04 - 現在 Kumamoto National College of Technology Department of Information, Communication and Electronic Engineering
- 2010/04 - 2012/03 Kumamoto National College of Technology Department of Information, Communication and Electronic Engineering
- - 2010/03 Fukuoka Industry Scienece & Technology Foundation
- - 2008/03 財団法人くまもとテクノ産業財団 電子応用機械技術研究所 研究員
Association Membership(s) (2)：
The Institute of Electronics Information and Communication Engineers
, 応用物理学会
