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J-GLOBAL ID：201301021241258783   Update date: Mar. 30, 2024

Deura Momoko

デウラ モモコ | Deura Momoko
Affiliation and department：
Ritsumeikan University Ritsumeikan-Global Innovation Research Organization

About Ritsumeikan University Ritsumeikan-Global Innovation Research Organization


Job title： Associate Professor
Research field  (3)： Crystal engineering ,  Thin-film surfaces and interfaces ,  Electric/electronic material engineering
Research keywords  (6)： 結晶工学 ,  薄膜および表面界面物性 ,  電気電子材料工学 ,  化合物半導体 ,  有機金属気相成長(MOVPE) ,  分子線エピタキシー(MBE)
Research theme for competitive and other funds  (6)：
  • 2019 - 2021 Realization of growth technology of high quality crystals on heterogeneous substrates by stress relaxation using self-generated voids
  • 2017 - 2019 Development of growth technology of high quality crystals on heterogeneous substrates by stress relaxation using self-generated voids
  • 2016 - 2019 Elucidation of equilibrium reaction mechanism of Si surface carbonization using CO gas
  • 2013 - 2016 Elucidation of dislocation generation mechanism from seed boundaries in mono-like Si crystals
  • 2012 - 2015 Elucidation of dynamic characters of dislocations and their electronic and optical properties in wide bandgap semiconductors
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Papers (53)：
  • Momoko Deura, Yutaka Ohno, Ichiro Yonenaga, Hiroyuki Fukuyama. Mechanism of SiC formation by Si surface carbonization using CO gas. Applied Surface Science. 2024. 159965-159965
  • Momoko Deura, Takuya Nakahara, Wan Chi Lee, Takeshi Momose, Yoshiaki Nakano, Masakazu Sugiyama, Yukihiro Shimogaki. Effect of layer structure of AlN interlayer on the strain in GaN layers during metal-organic vapor phase epitaxy on Si substrates. Journal of Applied Physics. 2023. 133. 16
  • Yuyuan Huang, Momoko Deura, Yusuke Shimoyama, Yukihiro Shimogaki, Takeshi Momose. Supercritical fluid deposition for conformal Cu film formation on sub-millimeter-scale structures used to fabricate terahertz waveguides. Applied Physics Express. 2022. 15. 7. 075502
  • Yuyuan Huang, Kuniaki Konishi, Momoko Deura, Yusuke Shimoyama, Junji Yumoto, Makoto Kuwata-Gonokami, Yukihiro Shimogaki, Takeshi Momose. Suitability of metallic materials for constructing metal-coated dielectric terahertz waveguides. Journal of Applied Physics. 2022. 131. 10. 105106-105106
  • Kazuki Tani, Tadashi Okumura, Katsuya Oda, Momoko Deura, Tatemi Ido. On-chip optical interconnection using integrated germanium light emitters and photodetectors. Optics Express. 2021. 29. 18. 28021-28021
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MISC (30)：
  • 奥友則, 百瀬健, 霜垣幸浩, 出浦桃子. Mechanism of void formation in the nitride layer grown on SiC/Si substrate. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2022. 69th
  • 奥友則, 百瀬健, 霜垣幸浩, 出浦桃子. Void design for stress relaxation in nitride semiconductor films on Si substrates. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • 岡本和也, 出浦桃子, 依田孝, 依田孝, 高橋英志, 宮野清孝, 津久井雅之, 百瀬健, 杉山正和, 杉山正和, et al. Relationship between crystal orientation rotated domain and v-pit formation during GaN growth on Si substrates. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2021. 68th
  • 岡本和也, 曽我拓実, 出浦桃子, 依田孝, 依田孝, 高橋英志, 家近泰, 宮野清孝, 津久井雅之, 百瀬健, et al. Categorization and structure analysis of pits generated during GaN growth on Si substrates. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2020. 67th
  • 岡本和也, 出浦桃子, 依田孝, 依田孝, 高橋英志, 宮野清孝, 津久井雅之, 百瀬健, 杉山正和, 杉山正和, et al. Orientation and stable side analysis of pits generated during GaN growth on Si substrates. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2020. 81st
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Patents (1)：
  • 有機薄膜の製造方法
Lectures and oral presentations  (18)：
  • MOVPE of GaN on SiC/Si substrates formed by Si surface carbonization
    (The 8th Asian Conference on Crystal Growth and Crystal Technology 2021)
  • Impact of AlN interlayer growth temperature on strain of GaN layer during MOVPE on Si substrates
    (19th International Conference on Metalorganic Vapor Phase Epitaxy 2018)
  • Mechanical properties of cubic-BN bulk single crystal evaluated by nanoindentation
    (12th International Conference on Nitride Semiconductors 2017)
  • Evaluation of mechanical properties for w-BN using nanoindentation
    (The 18th International Conference on Crystal Growth and Epitaxy 2016)
  • ナノインデンテーションを用いたInNの弾性特性の解明
    (第8回窒化物半導体結晶成長講演会 2016)
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Education (4)：
  • 2008 - 2011 The University of Tokyo
  • 2006 - 2008 The University of Tokyo
  • 2004 - 2006 The University of Tokyo
  • 2002 - 2004 The University of Tokyo
Professional career (1)：
  • 博士(工学) (東京大学)
Work history (5)：
  • 2017/04 - 2022/03 The University of Tokyo
  • 2013/10 - 2017/03 Tohoku University
  • 2013/04 - 2013/09 Tohoku University Institute of Multidisciplinary Research for Advanced Materials
  • 2011/04 - 2013/03 Tokyo University of Science Faculty of Science, Division 1 Applied Physics
  • 2008/04 - 2011/03 日本学術振興会特別研究員(DC1)
Committee career (6)：
  • 2019/01 - 現在 応用物理学会結晶工学分科会 幹事
  • 2017/10 - 現在 日本学術振興会結晶加工と評価技術第145委員会 委員
  • 2017/04 - 現在 文部科学省科学技術・学術政策研究所科学技術予測センター 科学技術専門家ネットワーク・専門調査員
  • 2016/04 - 現在 日本結晶成長学会ナノ構造・エピタキシャル成長分科会 幹事
  • 2016/01 - 2021/03 日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会 委員
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Awards (7)：
  • 2015 - 第5回女性研究者研究業績・人材育成賞(小舘香椎子賞)
  • 2015 - 平成27年度日本結晶成長学会ナノ構造・エピタキシャル成長分科会 研究奨励賞
  • 2014 - 第38回結晶成長討論会 討論会賞
  • 2008 - Best Student Contribution Award
  • 2008 - 第27回EMS賞
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Association Membership(s) (2)：
日本結晶成長学会 ,  応用物理学会
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