Okumura Hironori

オクムラヒロノリ | Okumura Hironori

Affiliation and department：
Job title： Assistant Professor
Homepage URL (1)： https://sites.google.com/view/okumura

Research field (2)： Crystal engineering , Electric/electronic material engineering

Research theme for competitive and other funds (19)：

2024 - 2027 Development of vacuum UV light emitting devices with controllable wavelength
2023 - 2027 Fabrication of vertical AlN devices
2024 - 2025 Development of an Innovative Contact Lens Device for Measurement and Removal of Reactive Oxygen Species in Advanced Dry Eye Treatment
2021 - 2025 Activation mechanism of implanted impurities in III-Nitrides
2019 - 2024 Power devices using III-Oxides

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Papers (38)：

Jia, Yun, Sato, Sora, Traore, Aboulaye, Morita, Ryo, Broccoli, Erwann, Florena, Fenfen Fenda, Islam, Muhammad Monirul, Okumura, Hironori, Sakurai, Takeaki. Electrical properties of vertical Cu₂O/β-Ga₂O₃ (001) p-n diodes. AIP ADVANCES. 2023. 13. 10
Okumura, Hironori, Watanabe, Yasuhiro, Shibata, Tomohiko. Temperature dependence of electrical characteristics of Si-implanted AlN layers on sapphire substrates. Applied Physics Express. 2023. 16. 064005
Okumura, Hironori, Ogawara, Yohei, Togawa, Manabu, Miyahara, Masaya, Isobe, Tadaaki, Itabashi, Kosuke, Nishinaga, Jiro, Imura, Masataka. Degradation of vertical GaN diodes during proton and xenon-ion irradiation. Japanese Journal of Applied Physics. 2023. 62. 064001
Okumura, Hironori. Pseudomorphic growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates by molecular beam epitaxy. Japanese Journal of Applied Physics. 2023. 62. 6. 065504
Nishinaga, Jiro, Togawa, Manabu, Miyahara, Masaya, Itabashi, Kosuke, Okumura, Hironori, Imura, Masataka, Kamikawa, Yukiko, Ishizuka, Shogo. Annealing effects on Cu(In,Ga)Se2 solar cells irradiated by high-fluence proton beam. Japanese Journal of Applied Physics. 2023. 62. SK1014

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Patents (2)：

Books (2)：

Lectures and oral presentations (48)：

Si doping of alpha-Al2O3 grown by molecular beam epitaxy
(International Workshop on Gallium Oxide and Related Materials)
High-temperature and high-power devices using AlN
(16th International Symposium on Advanced Plasma Science)
厳環境におけるワイドギャップ半導体の利用可能性
(名古屋大CIRFEセミナー)
酸化アルミニウムガリウムの電気伝導制御
(TREMS成果報告会)
極限環境で動作する半導体デバイス
(筑波大Tristar共創リレーセミナー)

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Education (2)：

2007 - 2012 Kyoto University Graduate School of Engineering Department of Electronic Science and Engineering
2003 - 2007 Kyoto University Faculty of Engineering School of Electrical & Electronic Engineering

Professional career (1)：

Work history (5)：

2018/04 - 現在 University of Tsukuba Faculty of Pure and Applied Sciences Assistant Professor (Tenure)
2016/04 - 2018/03 MIT EECS visiting researcher
2015/04 - 2016/03 EPFL Physics visiting researcher
2014/04 - 2015/03 NTT Basic research laboratory Thin film group Post-doc
2012/04 - 2014/03 UCSB Materials Post-doc (JSPS fellowship)

Committee career (3)：

2020/01 - 2022/12 International Conference on Solid State Devices and Materials Program Committee, Area 4
2021/04 - 2022/11 International Workshop on Gallium Oxide and Related Materials Program Committee
2020/03 - 2022/02 Electronic Materials Symposium Secretaries

Awards (3)：

Association Membership(s) (4)：

JSAP Ionization Radiation Division , Japanese Society of Applied Physics , Japanese Association for Crystal Growth , Material Research Society

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