Wada Osami

ワダオサミ | Wada Osami

Affiliation and department：
Job title： Professor

Research field (1)： Electronic devices and equipment

Research theme for competitive and other funds (8)：

2006 - 2008 Design and Integration of Power Line Circuit for SiC Power Devices Considering EMC
2005 - 2006 Development of hexagonal ferrite materials for electronic devices used at high frequency of GHz range on the basis of research on phase diagrams
1999 - 2000 Prediction of Far-Field EMI from Printed Circuit Boards by Means of Near-Field Measurement
1999 - 2000 In Situ and non-contact monitoring of gas-flux to atmosphere with diode lasers
1997 - 1998 Multi Channel Wavelength-Selective Optical Filter Using Pillbox Resonator

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Papers (149)：

Shun Yamaguchi, Takashi Hisakado, Osami Wada, Mahfuzul Islam. An Adaptive-Sampling Digital LDO with Statistical Comparator Selection Achieving 99.99% Maximum Current Efficiency and 0.25ps FoM in 65nm. 2023 IEEE Asian Solid-State Circuits Conference (A-SSCC). 2023
Mahfuzul Islam, Shogo Harada, Takashi Hisakado, Osami Wada. CMOS Temperature Sensor Utilizing Gate-length-based Threshold Voltage Modulation. 2023 21st IEEE Interregional NEWCAS Conference (NEWCAS). 2023
Raul R. Rodriguez G., Mahfuzul Islam, Takashi Hisakado, Osami Wada. Real-time Temperature Estimation of SiC MOSFETs Using Gate Voltage at Zero-current Switching for Inverter Applications. 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia). 2023
Shinichi Ota, Mahfuzul Islam, Takashi Hisakado, Osami Wada. Wide-range and low supply dependency MOSFET-basXDed temperature sensor utilizing statistical properties of scaled MOSFETs. Japanese Journal of Applied Physics. 2023. 62. SC
Shun Yamaguchi, Mahfuzul Islam, Takashi Hisakado, Osami Wada. A Fully Synchronous Digital LDO with Built-in Adaptive Frequency Modulation and Implicit Dead-Zone Control. Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC. 2023. 186-187

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MISC (333)：

Temperature sensing method utilizing a statistical property of sub-threshold MOSFET currents. 2022. 2022. 201-206
Low-Power Design of Digital LDO with Adaptive Frequency Scaling based on MOSFETs' subthreshold current. 2022. 2022. 113-119
山中優, 東山昇一, 稲岡優子, 久門尚史, 和田修己, 松嶋徹. Modeling of multi circuit switch for TDR measurement in underground distribution system. 電気学会全国大会講演論文集(CD-ROM). 2020. 2020
山中優, 東山昇一, 稲岡優子, 松嶋徹, 久門尚史, 和田修己. Path selection of TDR measurement by ferrite core for underground cable line having branch at multi-circuit switch. 電気設備学会全国大会講演論文集. 2020. 38th
原田彰吾, イスラムマーフズル, 久門尚史, 和田修己. MOSFETの統計的選択によるレファレンス不要なCMOS温度センサの設計-Design of Reference-free CMOS Temperature Sensor with Statistical MOSFET Selection-VLSI設計技術 ; デザインガイア2019 : VLSI設計の新しい大地. 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2019. 119. 282. 51-56

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Lectures and oral presentations (21)：

Formulation of Radiation Reaction and Scattering in Finite Length Single-Conductor Transmission Line Model
(電子情報通信学会技術研究報告 2019)
High frequency decoupling for reduction of common-mode current of three-phase inverter
(電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 2018)
Relation between Voltage Fluctuations of Internal Terminals and Output Terminal of Linear Regulator
(電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 2018)
Evaluation of Correlation between Reference and a Group of EMC Test Sites for in-vehicle Equipment : Validation of Reference Data in CISPR 25 Annex J
(電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 2017)
Evaluation of Correlation between Reference and a Group of EMC Test Sites for in-vehicle Equipment : Validation of Reference Data in CISPR 25 Annex J
(電気学会研究会資料. EMC = The papers of technical meeting on electromagnetic compatibility, IEE Japan 2017)

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Professional career (1)：

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