Rchr
J-GLOBAL ID：201401097727266145   Update date: Apr. 15, 2024

Sato Shin-ichiro

Sato Shin-ichiro
Affiliation and department：
National Institutes for Quantum and Radiological Science and Technology Quantum Materials and Applications Research Center

About National Institutes for Quantum and Radiological Science and Technology Quantum Materials and Applications Research Center


Job title： Senior Principal Researcher
Research field  (5)： Applied physics - general ,  Electric/electronic material engineering ,  Quantum beam science ,  Semiconductors, optical and atomic physics ,  Applied physics - general
Research keywords  (6)： Quantum Sensing ,  Rad-Hard Device and Space Solar Cells ,  Ion Beam Physics ,  Radiation Physics and Engineering ,  Semiconductor Physics and Engineering ,  Quantum Science
Research theme for competitive and other funds  (7)：
  • 2021 - 2027 ランタノイド・ナノフォトニクス量子デバイス
  • 2020 - 2025 Development of SiC Quantum Sensor for Harsh Environments
  • 2022 - 2025 Nanoscale deterministic single ion implantation for semiconductor qubit formation
  • 2018 - 2022 Lanthanoid doped GaN quantum sensors electrically operated at room temperature
  • 2018 - 2019 Innovative quantum sensing based on rare earth doped GaN
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Papers (65)：
  • Shin Ito, Shin ichiro Sato, Michał S. Boćkowski, Manato Deki, Hirotaka Watanabe, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Ken ichi Yoshida, Hideaki Minagawa, et al. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2024. 547
  • Shin-ichiro Sato, Kanako Shojiki, Ken-ichi Yoshida, Hideaki Minagawa, Hideto Miyake. Optical activation of implanted lanthanoid ions in aluminum nitride semiconductors by high temperature annealing. Optical Materials Express. 2024. 14. 2. 340-340
  • Shiro Entani, Shin-ichiro Sato, Mitsunori Honda, Chihiro Suzuki, Tomitsugu Taguchi, Shunya Yamamoto, Takeshi Ohshima. Structural analysis of high-energy implanted Ni atoms into Si(100) by X-ray absorption fine structure spectroscopy. Radiation Physics and Chemistry. 2022. 199. 110369-110369
  • Mitsuru Imaizumi, Yasuki Okuno, Tatsuya Takamoto, Shin-ichiro Sato, Takeshi Ohshima. Displacement damage dose analysis of the output characteristics of In0.5Ga0.5P and Cu(In,Ga)(S,Se)(2) solar cells irradiated with alpha ray simulated helium ions. JAPANESE JOURNAL OF APPLIED PHYSICS. 2022. 61. 4
  • Imaizmi Mitsuru, Okuno Yasuki, Sato Shin-Ichiro, Ohshima Takeshi. Study on Alpha-Particle Resistance of InGaP Solar Cell for Dosimeter Application. Proceedings of the Annual Meeting of the Japan Photovoltaic Society. 2021. 1. 100-100
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MISC (48)：
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Books (1)：
  • 反「大学改革」論:若手からの問題提起
    ナカニシヤ出版 2017 ISBN:4779510813
Education (2)：
  • 2004 - 2006 Kyoto University Graduate School of Engineering Department of Nuclear Engineering
  • 2000 - 2004 Kyoto University Faculty of Engineering School of Engineering Science
Professional career (1)：
  • 博士(工学) (京都大学)
Work history (6)：
  • 2022/07 - 現在 National Institutes for Quantum Science and Technology Quantum Materials and Applications Research Center Senior Principal Researcher
  • 2023/08 - 2023/08 U.S. Naval Research Laboratory Visiting Researcher
  • 2016/04 - 2022/06 National Institutes for Quantum and Radiological Science and Technology Principal Researcher
  • 2019/01 - 2019/11 RMIT University Australian Research Council Centre of Excellence for Nanoscale BioPhotonics Visiting Researcher
  • 2006/04 - 2016/03 Japan Atomic Energy Agency
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Association Membership(s) (2)：
日本物理学会 ,  応用物理学会
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

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