Art

J-GLOBAL ID：201702227980225554   Reference number：17A0214250

Air spacer for 10nm FinFET CMOS and beyond

10nm FinFET CMOSとそれ以降のための空気スペーサ【Powered by NICT】

Author (17)： Cheng K. (IBM, 257 Fuller Rd, Albany, NY 12203) ,  Park C. (GLOBALFOUNDRIES, 257 Fuller Rd, Albany, NY 12203) ,  Yeung C. (IBM, 257 Fuller Rd, Albany, NY 12203) ,  Nguyen S. (IBM, 257 Fuller Rd, Albany, NY 12203) ,  Zhang J. (IBM, 257 Fuller Rd, Albany, NY 12203) ,  Miao X. (IBM, 257 Fuller Rd, Albany, NY 12203) ,  Wang M. (IBM, 257 Fuller Rd, Albany, NY 12203) ,  Mehta S. (IBM, 257 Fuller Rd, Albany, NY 12203) ,  Li J. (IBM, 257 Fuller Rd, Albany, NY 12203) ,  Surisetty C. (IBM, 257 Fuller Rd, Albany, NY 12203) ,  Muthinti R. (IBM, 257 Fuller Rd, Albany, NY 12203) ,  Liu Z. (IBM, 257 Fuller Rd, Albany, NY 12203) ,  Tang H. (IBM, 257 Fuller Rd, Albany, NY 12203) ,  Tsai S. (GLOBALFOUNDRIES, 257 Fuller Rd, Albany, NY 12203) ,  Yamashita T. (IBM, 257 Fuller Rd, Albany, NY 12203) ,  Bu H. (IBM, 257 Fuller Rd, Albany, NY 12203) ,  Divakaruni R. (IBM, 257 Fuller Rd, Albany, NY 12203)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： IEDM  Page： 17.1.1-17.1.4  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： For the first time, we report ...

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Thesaurus term： reliability (property) ,  liner (lining) ,  ring oscillator ,  *spacer ,  electrostatic capacity ,  yield (ratio) ,  stray capacity ,  dielectrics ,  *complementary metal oxide semiconductor
Semi thesaurus term： オーバラップ ,  *FinFET , 【Automatic Indexing@JST】

JST classification (1)： Transistors  (NC03070N)

Terms in the title (3)： FinFET ,  CMOS ,  スペーサ