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J-GLOBAL ID:201702228278297501   Reference number:17A0548856

赤外線トモグラフィーによる太陽電池用n型Cz-Si中の酸素析出挙動の評価 炭素濃度と成条件の影響

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Material:
Volume: 64th  Page: ROMBUNNO.15p-211-7  Publication year: Mar. 01, 2017 
JST Material Number: Y0054B  ISSN: 2436-7613  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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All keywords is available on JDreamIII(charged).
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Lattice defects in semiconductors  ,  Crystal growth of semiconductors 

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