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J-GLOBAL ID:201702230168285835   Reference number:17A0055493

Strain induced response of AlGaN/GaN high electron mobility transistor located on cantilever and membrane

片持梁と膜に位置するAlGaN/GaN高電子移動度トランジスタの歪誘起応答【Powered by NICT】
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Material:
Volume: 2016  Issue: ASDAM  Page: 227-230  Publication year: 2016 
JST Material Number: W2441A  Document type: Proceedings
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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The III-Nitrides, especially A...
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JST classification
Category name(code) classified by JST.
Transistors 

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