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J-GLOBAL ID：201702241987547553   Reference number：17A0181116

Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO₂/Si substrate

直接結合されたInP/SiO-2/Si基板上にエピタキシャル成長させたIII-V活性層を用いた不均一集積レーザ【Powered by NICT】

Author (8)： Fujii Takuro (NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan) ,  Takeda Koji (NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan) ,  Kanno Erina (NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan) ,  Hasebe Koichi (NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan) ,  Nishi Hidetaka (NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan) ,  Yamamoto Tsuyoshi (NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan) ,  Kakitsuka Takaaki (NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan) ,  Matsuo Shinji (NTT Device Technology Labs., NTT Corporation, 3-1, Morinosato-Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： IPC  Page： 540-541  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We have grown an active InGaAs...

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Thesaurus term： *laser ,  *indium phosphide ,  *active layer
Semi thesaurus term： 直接変調 ,  閾値電流 ,  *シリコンウエハ , 【Automatic Indexing@JST】

JST classification (1)： Optical communication systems and equipment  (ND10000B)

Terms in the title (8)： InP ,  SiO ,  Si基板 ,  エピタキシャル成長 ,  活性層 ,  不均一 ,  集積 ,  レーザ