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J-GLOBAL ID:201702259406052211   Reference number:17A0214147

A 7nm CMOS platform technology featuring 4th generation FinFET transistors with a 0.027um2 high density 6-T SRAM cell for mobile SoC applications

モバイルSoC応用のための0.027μm~2高密度6T SRAMセルを用いた4~日発生FinFETトランジスタを特徴とする7nm CMOSプラットフォーム技術【Powered by NICT】
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Volume: 2016  Issue: IEDM  Page: 2.6.1-2.6.4  Publication year: 2016 
JST Material Number: W2441A  Document type: Proceedings
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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For the first time, a leading ...
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Semiconductor integrated circuit 

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