Art

J-GLOBAL ID：201702280973337157   Reference number：17A0258093

Atomic diffusion and interface reaction during diffusion bonding of SiC / Ti under alternating electric field

SIC/TI拡散接合過程における原子拡散と界面反応【JST・京大機械翻訳】

Author (5)： Sun Dongli (School of Materials Science and Engineering, Harbin Institute of Technology) ,  Zhang Ningbo (School of Materials Science and Engineering, Harbin Institute of Technology) ,  Wang Qing (School of Materials Science and Engineering, Harbin Institute of Technology) ,  Li Qihai (School of Materials Science and Engineering, Harbin Institute of Technology) ,  Han Xiuli (School of Materials Science and Engineering, Harbin Institute of Technology)
Material： Harbin Gongye Daxue Xuebao  (Journal of Harbin Institute of Technology)
Volume： 48  Issue： 11  Page： 61-68  Publication year： 2016 
JST Material Number： W1450A  ISSN： 0367-6234  CODEN： HPKYAY  Document type： Article
Article type： 原著論文  Country of issue： China (CHN)  Language： CHINESE (ZH)

Abstract/Point： In order to obtain the influen...

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Thesaurus term： voltage ,  electric field ,  shearing test ,  scanning electron microscope ,  direct voltage ,  energy dispersive X-ray spectrometry ,  AC voltage ,  shear strength ,  *interface (surface) ,  X-Ray Diffraction ,  *diffusion bonding ,  applied voltage ,  bonded interface ,  *interfacial reaction ,  *atomic diffusion ,  mechanical property ,  strength

Author keywords (5)： diffusion bonding ,  SiC ,  Ti ,  interface ,  electric field

JST classification (6)： Photochemistry in general  (CB08010U) ,  Chemical treatment of sewage and wastewater  (SC03050W) ,  Electrochemical reaction  (CB07050F) ,  Physical analysis of inorganic compounds  (CC03024P) ,  Inorganic compounds and elements in general  (CD01010D) ,  Bases,metal oxides  (CD01030Z)

Terms in the title (6)： SiC ,  Ti ,  拡散 ,  接合過程 ,  原子拡散 ,  界面反応