Art

J-GLOBAL ID：201702286733721466   Reference number：17A0214366

Nitridation of GaN surface for power device application: A first-principles study

パワーデバイス応用のためのGaN表面の窒化:第一原理研究【Powered by NICT】

Author (7)： Zhang Zhaofu (Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong) ,  Li Baikui (Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong) ,  Tang Xi (Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong) ,  Qian Qingkai (Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong) ,  Hua Mengyuan (Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong) ,  Huang Baoling (Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong) ,  Chen Kevin J. (Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2016  Issue： IEDM  Page： 36.2.1-36.2.4  Publication year： 2016 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： The nitridation effects on GaN...

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Thesaurus term： energy level ,  *gallium nitride ,  MOS structure ,  photoemission ,  bias ,  valence band ,  *nitriding ,  heterojunction ,  *first principle ,  interface(surface) ,  band gap
Semi thesaurus term： 物理モデル ,  界面層 ,  第一原理計算 ,  *パワーデバイス , 【Automatic Indexing@JST】

JST classification (3)： Electronic structure of crystalline insulators  (BM02070Y) ,  Electronic structure of crystalline metals  (BM02050C) ,  Electronic structure of impurites and defects  (BM02100I)

Terms in the title (6)： パワーデバイス ,  応用 ,  GaN ,  窒化 ,  第一原理 ,  研究