2014 - 2017 Investigation of formation mechanism of crystal defects induced by machining at the surface of single crystal SiC
2012 - 2013 パワーデバイス用炭化珪素ウエハに対する低欠陥加工技術の開発
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Papers (91)：
Yukari Ishikawa, Yoshihiro Sugawara, Yongzhao Yao, Makoto Miyoshi, Takashi Egawa. Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns. Journal of Materials Science. 2024. 59. 2974-2987
Yongzhao Yao, Yoshihiro Sugawara, Kohei Sasaki, Akito Kuramata, Yukari Ishikawa. Anisotropic mechanical properties of β-Ga2O3 single-crystal measured via angle-dependent nanoindentation using a Berkovich indenter【Open Access】. Journal of Applied Physics. 2023. 134. 215106
Yongzhao Yao, Yoshiyuki Tsusaka, Keiichi Hirano, Kohei Sasaki, Akito Kuramata, Yoshihiro Sugawara, Yukari Ishikawa. Three-dimensional distribution and propagation of dislocations in β-Ga2O3 revealed by Borrmann effect X-ray topography【Open Access】. Journal of Applied Physics. 2023. 134. 155104
Taketo Kowaki, Wataru Matsumura, Koki Hanasaku, Ryo Okuno, Daisuke Inahara, Shunsuke Matsuda, Satoshi Kurai, Yongzhao Yao, Yukari Ishikawa, Narihito Okada, et al. Si Doping Effects in AlGaN Channel Layer on Performance of N-polar AlGaN/AlN FETs. physica status solidi (a). 2023. 220. 2200872
Daisuke Inahara, Shunsuke Matsuda, Wataru Matsumura, Ryo Okuno, Koki Hanasaku, Taketo Kowaki, Minagi Miyamoto, Yongzhao Yao, Yukari Ishikawa, Atsushi Tanaka, et al. Investigation of Electrical Properties of N-Polar AlGaN/AlN Heterostructure Field Effect Transistors. Physica Status Solidi (a). 2023. 220. 2200871
Visualization of structural defects in β-Ga<sub>2</sub>O<sub>3</sub> using synchrotron X-ray techniques for power-device application
(2024)
Synchrotron-radiation X-ray topographic and X-ray reticulographic observation of AlN single-crystal substrates
(2023)
Observation of dislocations in thick GaN substrates using synchrotron-radiation X-ray topography based on anomalous transmission
(2023)
Operando and ex-situ X-ray topographic observation of dislocations in β-Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes and their glide and multiplication under device operation
(2022)
Dislocation analysis for large-area thick EFG β-Ga<sub>2</sub>O<sub>3</sub> substrates using Borrmann effect synchrotron x-ray topography
((ORAL) IWGO-4 (The 4th International Workshop on Gallium Oxide and Related Materials), Nagano, Japan, Oct 23-27, 2022 2022)
2020/03 - The NAGAI Foundation for Science & Technology Award of Collaborative Research
2018/09 - 公益社団法人 応用物理学会 第12回 応用物理学会Poster Award 放射光X線トポグラフィによるPVT法AlN単結晶基板の転位評価
2013/09 - 公益社団法人 応用物理学会 第35回(2013年度)応用物理学会 論文賞 Dislocation Revelation from (000-1) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature 【Y. Yao, et al, APEX 5, 075601 (2012).】
2013/06 - 公益社団法人 日本セラミックス協会 2012年 Journal of the Ceramic Society of Japan 優秀論文賞 Influence of substrate nitridation on GaN and InN growth by plasma-assisted molecular-beam epitaxy
