Characterization of Quantum-Functional Materials and Their Application to Electronic Devices
Atomic-Layer Controlled Heteroepitaxy of New Quantum-Functional Materials
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論文 (368件):
Ryosuke Noro, Mariko Adachi, Yasufumi Fujiwara, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama. Fabrication of polarity inverted LiNbO3/GaN channel waveguide by surface activated bonding for high-efficiency transverse quasi-phase-matched wavelength conversion. Japanese Journal of Applied Physics. 2023. 62. 10. 102001-102001
Jun Tatebayashi, Takaya Otabara, Takuma Yoshimura, Raiki Hada, Ryo Yoshida, Shuhei Ichikawa, Yasufumi Fujiwara. Formation and Optical Characteristics of GaN:Eu/GaN Nanowires for Applications in Light-Emitting Diodes. ECS Journal of Solid State Science and Technology. 2023
Tomoaki Nambu, Tomohiro Nakahara, Yuma Yasuda, Yasufumi Fujiwara, Masayoshi Tonouchi, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama. Second harmonic generation from a-plane GaN vertical monolithic microcavity pumped with femtosecond laser. Applied Physics Express. 2023. 16. 7. 072005-072005
Jun Tatebayashi, Kazuto Nishimura, Shuhei Ichikawa, Shinya Yamada, Yoshikata Nakajima, Kazuhisa Sato, Kohei Hamaya, Yasufumi Fujiwara. Red Electroluminescence from Light Emitting Diodes Based on Eu-Doped ZnO Embedded in p-GaN/Al2O3/n-ZnO Heterostructures. ECS Journal of Solid State Science and Technology. 2023. 12. 7. 076017-076017
Hiroto Honda, Soshi Umeda, Kanako Shojiki, Hideto Miyake, Shuhei Ichikawa, Jun Tatebayashi, Yasufumi Fujiwara, Kazunori Serita, Hironaru Murakami, Masayoshi Tonouchi, et al. 229 nm far-ultraviolet second harmonic generation in a vertical polarity inverted AlN bilayer channel waveguide. Applied Physics Express. 2023. 16. 6. 062006-062006
"Extremely large Er excitation cross section in Er,O-codoped GaAs light emitting diodes grown by organometallic vapor phase epitaxy"
Materials Research Society Symposium Proceedings, Progress in Semiconductors II--Electronic and Optoelectronic Applications 2003
"ESR study of heavily doped GaAs:Er grown by organometallic vapor phase epitaxy"
EPR in the 21st Century: Basics and Applications to Material, Life and Earth Sciences 2002
"Organometallic vapor phase and droplet heteroepitaxy of quantum structur"
InP and Related Compounds -Materials, Applications and Devices-, Optoelectronic Properties of Semiconductors and Superlattices 2000
"Growth condition dependences of optical properties of Er in InP and local structures"
InP and Related Compounds -Materials, Applications and Devices-, Optoelectronic Properties of Semiconductors and Superlattices 2000
"Formation of InGaAs Dots on InP Substrate with Lattice-Matching Growth Condition by Droplet Heteroepitaxy"
Institute of Physics Conference Series 1999
Enhanced Eu luminescence in GaN: Eu,O-based light emitting diodes via introduction of nanostructures and nanocavities
(Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials 2020)
Evaluations of Selective Dry Etching of GaAs Core Layer having Embedded InAs Quantum Dots Using Optical Measurements towards Photonic Crystal Laser Fabrication
(2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) 2020)
Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
(Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, pp.69-70, Osaka, Japan. 2006)
Photoluminescence properties of ion-beam synthesized b-FeSi2/Si interface [Invited Talk]
(Proceedings of the International Workshop on Sustainable Energy and Materials (Tokyo, Japan, September 5, 2006) pp. 3-39-3-42. 2006)
Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures(450-600°C)
(Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.1094-1095. 2006)
1995/11 - 1996/01 University of Illinois at Urbana-Champaign Materials Research Laboratory and Department of Electrical and Computer Engineering Visiting Associate Professor
1991/01 - 1993/03 大阪大学 基礎工学部 講師
1985/08 - 1991/01 大阪大学 基礎工学部 助手
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委員歴 (5件):
2020/03 - 2022/03 公益社団法人応用物理学会 副会長
2009 - (社)日本金属学会 セミナー・シンポジウム委員会委員
2008 - (社)日本材料学会 学会将来構想WGメンバー
2007 - (社)日本金属学会 分科会委員会委員
2004 - Japanese Journal of Applied Physics 編集委員
受賞 (17件):
2021/12 - International Display Workshop 2021 (IDW'21) Best Paper Award Eu-Doped GaN-Based Red LEDs as a Key Technology for Micro-LED Displays with Ultrahigh Resolution