研究者
J-GLOBAL ID：200901014083638329   更新日: 2024年04月09日

児島 一聡

コジマ カズトシ | Kojima Kazutoshi
所属機関・部署：
独立行政法人産業技術総合研究所 先進パワーエレクトロニクス研究センター 新機能材料チーム

独立行政法人産業技術総合研究所 先進パワーエレクトロニクス研究センター 新機能材料チーム について


職名： チーム長
ホームページURL (1件)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=K51210778
研究分野 (1件)： 電気電子材料工学
競争的資金等の研究課題 (2件)：
  • 2020 - 2023 新規高温有機金属気相成長法における高品質AlNヘテロエピタキシーに関する研究
  • 2020 - 2023 シリコンカーバイド極限環境エレクトロニクスのIoTプラットフォーム形成
論文 (139件)：
  • Mitsuru Sometani, Kunihide Oozono, Shiyang Ji, Takeshi Tawara, Tadao Morimoto, Tomohisa Kato, Kazutoshi Kojima, Shinsuke Harada. Comparison of 1.2 kV SiC Superjunction MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth. IEEJ Transactions on Electronics, Information and Systems. 2024. 144. 3. 257-262
  • Atsuki Hidaka, Yuki Kondo, Akinobu Takeshita, Hideharu Matsuura, Kazuma Eto, Shiyang Ji, Kazutoshi Kojima, Tomohisa KATO, Sadafumi Yoshida, Hajime Okumura. Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition. Japanese Journal of Applied Physics. 2023
  • Takuma Doi, Shigehisa Shibayama, Mitsuo Sakashita, Kazutoshi Kojima, Mitsuaki Shimizu, Osamu Nakatsuka. Low-temperature formation of Mg/n-type 4H-SiC ohmic contacts with atomically flat interface by lowering of Schottky barrier height. Applied Physics Express. 2022. 15. 1. 015501-015501
  • Hideharu Matsuura, Yuki Kondo, Kosuke Iida, Atsuki Hidaka, Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura. Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC. JAPANESE JOURNAL OF APPLIED PHYSICS. 2021. 60. 3
  • Tuan Minh Hoang, Hitoshi Ishiwata, Yuta Masuyama, Yuichi Yamazaki, Kazutoshi Kojima, Sang-Yun Lee, Takeshi Ohshima, Takayuki Iwasaki, Digh Hisamoto, Mutsuko Hatano. Thermometric quantum sensor using excited state of silicon vacancy centers in 4H-SiC devices. Applied Physics Letters. 2021. 118. 4. 044001-044001
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MISC (49件)：
  • Hideharu Matsuura, Akinobu Takeshita, Atsuki Hidaka, Shiyang Ji, Kazuma Eto, Takeshi Mitani, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura. Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC (vol 59, 051004, 2020). JAPANESE JOURNAL OF APPLIED PHYSICS. 2020. 59. 8
  • Yuichi Yamazaki, Yoji Chiba, Yoji Chiba, Takahiro Makino, Shin Ichiro Sato, Naoto Yamada, Takahiro Satoh, Yasuto Hijikata, Kazutoshi Kojima, Sang Yun Lee, et al. Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing. Journal of Materials Research. 2018
  • Keiko Masumoto, Chiaki Kudou, Kentaro Tamura, Johji Nishio, Sachiko Ito, Kazutoshi Kojima, Toshiyuki Ohno, Hajime Okumura. Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition (vol 381, pg 139, 2013). JOURNAL OF CRYSTAL GROWTH. 2013. 383. 172-172
  • T. Ohshima, M. Deki, T. Makino, N. Iwamoto, S. Onoda, T. Hirao, K. Kojima, T. Tomita, S. Matsuo, S. Hashimoto. Breakdown Voltage In Silicon Carbide Metal-Oxide-Semiconductor Devices Induced By Ion Beams. APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY. 2013. 1525. 654-658
  • Kazutoshi Kojima, Satoshi Kuroda, Hajime Okumura, Kazuo Arai. Homoepitaxial growth on a 4H-SiC C-face substrate. CHEMICAL VAPOR DEPOSITION. 2006. 12. 8-9. 489-494
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特許 (6件)：
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学位 (1件)：
  • 博士(工学) (筑波大学)
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